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Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy

  • Franck Natali (a1), Joe Trodahl (a1), Stéphane Vézian (a2), Antoine Traverson (a1), Benjamin Damilano (a2) and Ben Ruck (a1)...

Abstract

GdN/SmN based superlattices have been grown by molecular beam epitaxy. In-situ reflection high energy electron diffraction was used to evaluate the evolution of the epitaxial growth and the structural properties were assessed by ex-situ X-ray diffraction. Hall Effect and resistivity measurements as a function of the temperature establish that the superlattices are heavily n-type doped semiconductors and the electrical conduction resides in both REN layers, SmN and GdN.

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