Skip to main content Accessibility help
×
Home

Enhanced Reliability of Top-pinned Perpendicular Magnetic Tunnel Junction by Post-oxidation of Sputtered MgO Barrier

  • Chikako Yoshida (a1), Hideyuki Noshiro (a1), Yuichi Yamazaki (a1) and Toshihiro Sugii (a1)

Abstract

We proposed an MgO barrier which is fabricated by combination of rf-sputter deposition of MgO film and subsequent in-situ post oxidation (PO). We found that the perpendicular magnetic anisotropy (PMA) of the CoFeB layer formed on this MgO barrier with PO was improved. We also found that a short error rate reduced drastically and a magnetoresistance (MR) ratio increased about 20% for the magnetic tunnel junction (MTJ) with this MgO barrier with PO. In addition, we showed that this MgO barrier with PO has long endurance life compared with conventional sputtered MgO barriers, and has a potential to operate over 1016 write cycles.

Furthermore, we have observed that the PO could suppress the Fe diffusion into the MgO barrier and form Fe-O bonding at MgO/CoFeB interface using electron energy-loss spectroscopy (EELS). The obtained results might be involved to the improvement of PMA and MTJ characteristics.

Copyright

Corresponding author

References

Hide All
1. Zhao, W, Zhao, X, Zhang, B, Cao, K, Wang, L, Kang, W. Shi, Q., Wang, M., Zhang, Y., Wang, Y., Peng, S., Klein, J., Naviner, L., and Ravelosona, D., Materials 9, 41 (2016).
2. Kim, D. J., Choi, W. S., Schleicher, F., Shin, R. H., Boukari, S., Davesne, V., Kieber, C., Arabski, J., Schmerber, G., Beaurepaire, E., Jo, W., and Bowen, M. et al., Appl. Phys. Lett. 97, 263502 (2010).
3. Iba, Y., Yoshida, C., Hatada, A., Nakabayashi, M., Takahashi, A., Yamazaki, Y., Noshiro, H., Tsunoda, K., Takenaga, T., Aoki, M. and Sugii, T., VLSI Tech. Dig., T136, 2013.
4. Amara-Dababi, S., Sousa, R. C., Chshiev, M., Béa, H., Alvarez-Hé rault, J., Lombard, L., Prejbeanu, I. L., Mackay, K., and Dieny, B., Appl. Phys. Lett. 99, 083501 (2011).
5. Degraeve, R., Ogier, J. L., Bellens, R., Roussel, P. J., Groeseneken, G., and Maes, H. E., IEEE Trans. Electron Devices 45, 472 (1998).
6. Yoshida, C., Kurasawa, M., Lee, Y. M., Tsunoda, K., Aoki, M., and Sugiyama, Y., Proc. IEEE Int. Reliability Physics Symp., (2009) p. 139.
7. Sato, S., Honjo, H., Ikeda, S., Ohno, H., Endoh, T., and Niwal, M., Jpn. J. Appl. Phys. 55, 04EE05 (2016).
8. Komagaki, K., Hattori, M., Noma, K., Kanai, H., Kobayashi, K., Uehara, Y., Tsunoda, M., and Takahashi, M., IEEE Trans. Magn. 45, 3453 (2009).
9. Wu, E., Aitken, J., Novak, E., Vayshenker, A., Varekamp, P., Hueckel, G., and McKenna, J., IEDM Technical Digest, (2000) p541.
10. Shimabukuro, R., Nakamura, K., Akiyama, T., and Ito, T., Phys. E 42, 1014 (2010).
11. Yang, H. X., Chshiev, M., Dieny, B., Lee, J. H., Manchon, A., and Shin, K. H., Phys. Rev. B 84, 054401 (2011).
12. Tsai, W. C., Liao, S. C., Hou, H. C., Yen, C. T., Wang, Y. H., Tsai, H. M., Chang, F. H., Lin, H. J., and Lai, Chih-Huang, Appl. Phys. Lett. 100, 172414 (2012).
13. Kurata, N. Tanaka, Microsc. Microanal. Microstruct. 2, 183 (1991).

Keywords

Enhanced Reliability of Top-pinned Perpendicular Magnetic Tunnel Junction by Post-oxidation of Sputtered MgO Barrier

  • Chikako Yoshida (a1), Hideyuki Noshiro (a1), Yuichi Yamazaki (a1) and Toshihiro Sugii (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed