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Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector

Published online by Cambridge University Press:  01 February 2016

Z.C. Liu
Affiliation:
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiao Tong University, Xi'an, Shaanxi, China, 710049
F.N. Li
Affiliation:
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiao Tong University, Xi'an, Shaanxi, China, 710049
W. Wang
Affiliation:
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiao Tong University, Xi'an, Shaanxi, China, 710049
J.W. Zhang
Affiliation:
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiao Tong University, Xi'an, Shaanxi, China, 710049
F. Lin
Affiliation:
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiao Tong University, Xi'an, Shaanxi, China, 710049
H.X. Wang*
Affiliation:
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiao Tong University, Xi'an, Shaanxi, China, 710049
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Abstract

The performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on high-pressure-high-temperature Ib-type diamond substrate. Then the buried-in electrodes with different depths were formed by oxygen plasma reactive ion etching method and radio frequency magnetron sputtering technique on this diamond layer. Compared with that of traditional planar electrode photodetector, the responsivity of buried-in electrode photodetector shows higher value, which reaches the highest when the electrode depth is 100 nm.

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Articles
Copyright
Copyright © Materials Research Society 2016 

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