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Development of the Nitride Laser Diode Arrays for Video and Movie Projectors

Published online by Cambridge University Press:  15 February 2016

Piotr Perlin ,
Szymon Stańczyk ,
Steve Najda ,
Tadek Suski ,
Przemek Wiśniewski ,
Irina Makarowa ,
Łucja Marona ,
Anna Kafar ,
Agata Bojarska  and
Robert Czernecki
...Show all authors
Piotr Perlin*
Affiliation:
Institute of High Pressure Physics, “Unipress”, Sokołowska 29/37, 01-142 Warsaw, Poland
Szymon Stańczyk
Affiliation:
Institute of High Pressure Physics, “Unipress”, Sokołowska 29/37, 01-142 Warsaw, Poland
Steve Najda
Affiliation:
TopGaN Ltd, Sokołowska 29/37, 01-142 Warsaw, Poland
Tadek Suski
Affiliation:
Institute of High Pressure Physics, “Unipress”, Sokołowska 29/37, 01-142 Warsaw, Poland
Przemek Wiśniewski
Affiliation:
Institute of High Pressure Physics, “Unipress”, Sokołowska 29/37, 01-142 Warsaw, Poland TopGaN Ltd, Sokołowska 29/37, 01-142 Warsaw, Poland
Irina Makarowa
Affiliation:
TopGaN Ltd, Sokołowska 29/37, 01-142 Warsaw, Poland
Łucja Marona
Affiliation:
Institute of High Pressure Physics, “Unipress”, Sokołowska 29/37, 01-142 Warsaw, Poland TopGaN Ltd, Sokołowska 29/37, 01-142 Warsaw, Poland
Anna Kafar
Affiliation:
Institute of High Pressure Physics, “Unipress”, Sokołowska 29/37, 01-142 Warsaw, Poland
Agata Bojarska
Affiliation:
Institute of High Pressure Physics, “Unipress”, Sokołowska 29/37, 01-142 Warsaw, Poland
Robert Czernecki
Affiliation:
Institute of High Pressure Physics, “Unipress”, Sokołowska 29/37, 01-142 Warsaw, Poland TopGaN Ltd, Sokołowska 29/37, 01-142 Warsaw, Poland
Robert Sarzała
Affiliation:
Lodz, University of Technology, Łódź, Poland
Maciej Kuc
Affiliation:
Lodz, University of Technology, Łódź, Poland
Mike Leszczynski
Affiliation:
Institute of High Pressure Physics, “Unipress”, Sokołowska 29/37, 01-142 Warsaw, Poland TopGaN Ltd, Sokołowska 29/37, 01-142 Warsaw, Poland
*
*(Email: piotr@unipress.waw.pl)
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Abstract

We demonstrated the fabrication of 10 emitters InGaN laser diode array of the maximum output power of 9 W at 420 nm. The device as a whole has the differential efficiency of above 1 W/A. The maximum output power is limited to 9 W (pulse operation) by catastrophic mirror damage or to around 5 W in CW operation by thermal roll-over. Larger arrays with stripes width of around 15 µm and numbers of emitters up to 20 should enable reaching 20 W, which is suitable for light engine of desktop projectors and a building block of cinema theater projectors.

Keywords

III-Voptoelectronicpackaging
Type
Articles
Information
MRS Advances , Volume 1 , Issue 2: Energy and Sustainability , 2016 , pp. 103 - 108
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Janssens, P., Malfait, K., "Future prospects of high-end laser projectors", Proc. SPIE 7232, Emerging Liquid Crystal Technologies IV, 72320Y, (2009)CrossRefGoogle Scholar
Coldren, L. A., Corzine, S. W., Mashanovitch, M. L., “Diode Lasers and Photonic Integrated Circuits”, 2nd Edition, Wiley 2012.Google Scholar
Hempel, M., Tomm, J.W., Stojetz, B., König, H., Strauss, U., Elsaesser, T., Kinetics of catastrophic optical damage in GaN-based diode lasers. Semiconductor Science and Technology, 30, 072001 (2015)CrossRefGoogle Scholar
Perlin, P., Marona, L., Holc, K., Wisniewski, P., Suski, T., Leszczynski, M., Czernecki, R., Najda, S., Zajac, M., Kucharski, R., “InGaN Laser Diode Mini-Arrays” Applied Physics Express 4, 062103 (2011)CrossRefGoogle Scholar
Goto, S., Ohta, M., Yabuki, Y., Hoshina, Y., Naganuma, K., Tamamura, K., Hashizu, T., and Ikeda, M.: Phys. Status Solidi A 200, 122 (2003).CrossRefGoogle Scholar
Samonji, K. ; Yoshida, S. ; Hagino, H. ; Yamanaka, K., Takigawa, S., "High-power operation of a wide-striped InGaN laser diode array", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771K, (2012)Google Scholar
Stańczyk, S., Czyszanowski, T., Kafar, A., Goss, J., Grzanka, S., Grzanka, E., Czernecki, R., Bojarska, A., Targowski, G., Leszczyński, M., Suski, T., Kucharski, R. and Perlin, P., "Graded-index separate confinement heterostructure InGaN laser diodes", Appl. Phys. Lett. 103, 261107 (2013)Google Scholar
Kuc, M.,, Sarzała, R. P., Nakwaski, W., “Thermal crosstalk in arrays of III-N-based Lasers”, Materials Science and Engineering: B, 178, 1395 (2013)Google Scholar
Perlin, P., Marona, L., Leszczyński, M., Suski, T., Wisniewski, P., Czernecki, R., Grzegory, I., “Degradation mechanisms of InGaN laser diodes”, Proceedings of the IEEE, 98, 1214 (2010)Google Scholar
Schoedl, T., Schwarz, U. T., Kümmler, V., Furitsch, M., Leber, A., Miler, A., Lell, A., Härle, V. “Facet degradation of GaN heterostructure laser diodes”, J. Appl. Phys. 97, 123102 (2005)Google Scholar