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Bandgap Engineering of Amorphous Hydrogenated Silicon Carbide

Published online by Cambridge University Press:  07 June 2016

J. A. Guerra ,
L. M. Montañez ,
K. Tucto ,
J. Angulo ,
J. A. Töfflinger ,
A. Winnaker  and
R. Weingärtner
J. A. Guerra*
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú Department of Material Science 6, University of Erlangen-Nuremberg, Martenstr. 6, Erlangen 91058, Germany
L. M. Montañez
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
K. Tucto
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
J. Angulo
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
J. A. Töfflinger
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
A. Winnaker
Affiliation:
Department of Material Science 6, University of Erlangen-Nuremberg, Martenstr. 6, Erlangen 91058, Germany
R. Weingärtner
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
*
*(Email: guerra.jorgea@pucp.edu.pe)
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Abstract

A simple model to describe the fundamental absorption of amorphous hydrogenated silicon carbide thin films based on band fluctuations is presented. It provides a general equation describing both the Urbach and Tauc regions in the absorption spectrum. In principle, our model is applicable to any amorphous material and it allows the determination of the bandgap. Here we focus on the bandgap engineering of amorphous hydrogenated silicon carbide layers. Emphasis is given on the role of hydrogen dilution during the deposition process and post deposition annealing treatments. Using the conventional Urbach and Tauc equations, it was found that an increase/decrease of the Urbach energy produces a shrink/enhancement of the Tauc-gap. On the contrary, the here proposed model provides a bandgap energy which behaves independently of the Urbach energy.

Keywords

amorphousoptical propertiesthin film
Type
Articles
Information
MRS Advances , Volume 1 , Issue 43: Energy and Environment , 2016 , pp. 2929 - 2934
Copyright
Copyright © Materials Research Society 2016 

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References

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