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Effects of Surface Doping of Si Absorbers on the Band Alignment and Electrical Performance of TiO2-Based Electron-Selective Contacts

Published online by Cambridge University Press:  19 March 2019

Hyunju Lee*
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya468-8511, Japan
Takefumi Kamioka
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya468-8511, Japan
Noritaka Usami
Graduate School of Engineering, Nagoya University, Nagoya464-8603, Japan
Yoshio Ohshita
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya468-8511, Japan
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We have investigated the chemical and electrical properties of a thin SiO2/TiO2 stacking layer deposited on n-Si and heavily phosphorus-doped n++ Si substrates to elucidate effects of phosphorus doping of Si absorbers on the band alignment and electrical performance of a SiO2/TiO2 stack-based electron-selective contact deposited on the differently doped Si substrates. From our XPS study, we show a shift of the TiO2 energy levels up to ∼0.13 eV with respect to those of Si as the doping level of Si substrates changes. We also show that the conduction band offset of the SiO2/TiO2 stacking layer at the interface with the n++ Si substrate seems to smaller than that of the SiO2/TiO2 stacking layer at the interface with n-Si substrate. Finally, from our electrical transport measurements, we could conclude that the thinner tunneling barrier, the increased electron density in front of the SiO2 layer in the n++ Si surface, and/or the reduced barrier height by heavy doping, seem to enhance the majority electron transport property of the SiO2/TiO2/n++ Si samples compared to that of the SiO2/TiO2/n-Si samples.

Copyright © Materials Research Society 2019 

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