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Chemical Vapor Growth of Silicon Phosphide Nanostructures

Published online by Cambridge University Press:  25 November 2019

Zhuoqun Wen
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180
Yiping Wang
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180
Jian Shi*
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180
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In the search for chemically stable two-dimensional (2D) materials with high in-plane mobility, proper bandgap, and compatibility with vapor-based fabrication, van der Waals semiconductor SiP has become a potential candidate as a robust variation of black phosphorous. While bulk SiP crystals were synthesized in the 1970s, the vapor-based synthesis of SiP nanostructures or thin films is still absent. We here report the first chemical vapor growth of SiP nanostructures on SiO2/Si substrate. SiP islands with lateral size up to 20 μm and showing well-defined Raman signals were grown on SiO2/Si substrate or on SiP-containing concentric rings. The presence of SiP phase is confirmed by XRD. The formation of rings and islands is explained by a multiple coffee ring growth model where a dynamic fluctuation of droplet growth front induces the topography of concentric ring surfaces. This new growth method might shed light on the controlled growth of group IV-III high-mobility 2D semiconductors.

Copyright © Materials Research Society 2019

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