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Chemical Vapor Growth of Silicon Phosphide Nanostructures

Published online by Cambridge University Press:  25 November 2019

Zhuoqun Wen
Affiliation:
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180
Yiping Wang
Affiliation:
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180
Jian Shi*
Affiliation:
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180
*
*correspondence: shij4@rpi.edu
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Abstract

In the search for chemically stable two-dimensional (2D) materials with high in-plane mobility, proper bandgap, and compatibility with vapor-based fabrication, van der Waals semiconductor SiP has become a potential candidate as a robust variation of black phosphorous. While bulk SiP crystals were synthesized in the 1970s, the vapor-based synthesis of SiP nanostructures or thin films is still absent. We here report the first chemical vapor growth of SiP nanostructures on SiO2/Si substrate. SiP islands with lateral size up to 20 μm and showing well-defined Raman signals were grown on SiO2/Si substrate or on SiP-containing concentric rings. The presence of SiP phase is confirmed by XRD. The formation of rings and islands is explained by a multiple coffee ring growth model where a dynamic fluctuation of droplet growth front induces the topography of concentric ring surfaces. This new growth method might shed light on the controlled growth of group IV-III high-mobility 2D semiconductors.

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Articles
Copyright
Copyright © Materials Research Society 2019

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Footnotes

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equally contributed

References

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