Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-25T11:10:47.924Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure and Chemistry across Interfaces at Nanoscale of a Ge Quantum Well Embedded within Rare Earth Oxide Layers

Published online by Cambridge University Press:  24 June 2011

Tanmay Das  and
Somnath Bhattacharyya
Tanmay Das
Affiliation:
Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India
Somnath Bhattacharyya*
Affiliation:
Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India
*
Corresponding author. E-mail: somnath_tem@yahoo.com
Get access

Abstract

Structure and chemistry across the rare earth oxide-Ge interfaces of a Gd2O3-Ge-Gd2O3 heterostructure grown on p-Si (111) substrate using encapsulated solid phase epitaxy method have been studied at nanoscale using various transmission electron microscopy methods. The structure across both the interfaces was investigated using reconstructed phase and amplitude at exit plane. Chemistry across the interfaces was explored using elemental mapping, high-angle annular dark-field imaging, electron energy loss spectroscopy, and energy dispersive X-ray spectrometry. Results demonstrate the structural and chemical abruptness of both the interfaces, which is most essential to maintain the desired quantum barrier structure.

Keywords

TEMquantum wellexit face wave reconstructionEELSSTEMelemental mapEDXS
Type
Materials Applications
Information
Microscopy and Microanalysis , Volume 17 , Issue 5 , October 2011 , pp. 759 - 765
Copyright
Copyright © Microscopy Society of America 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Bhattacharyya, S., Koch, C.T. & Ruhle, M. (2006). Projected potential profiles across interfaces obtained by reconstructing the exit face wave function from through focal series. Ultramicroscopy 106(6), 525–538.CrossRefGoogle ScholarPubMed
Bojarczuk, N.A., Copel, M., Guha, S., Narayanan, V., Preisler, E.J., Ross, F.M. & Shang, H. (2003). Epitaxial silicon and germanium on buried insulator heterostructures and devices. Appl Phys Lett 83, 5443–5445.CrossRefGoogle Scholar
Crozier, P.A. (1995). Quantitative elemental mapping of materials by energy-filtered imaging. Ultramicroscopy 58(2), 157–174.CrossRefGoogle Scholar
Egerton, R.F. (1996). Electron Energy-Loss Spectroscopy in the Electron Microscope, 2nd Ed., pp. 304–305. New York, London: Plenum Press.CrossRefGoogle Scholar
Fissel, A., Elassar, Z. & Kirfel, O. (2006). Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon. J Appl Phys 99, 074105.CrossRefGoogle Scholar
Gerchberg, R.W. & Saxton, W.O. (1972). A practical algorithm for the determination of phase from image and diffraction plane pictures. Optik 35, 237–246.Google Scholar
Giussani, A., Rodenbach, P., Zaumseil, P., Dabrowski, J., Krups, R., Weidner, G., Müssig, H.J., Storck, P., Wollschläger, J. & Achroeder, T. (2009). Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study. J Appl Phys 105, 033512.Google Scholar
Hong, M., Kwo, J., Kortan, A.R., Mannaerts, J.P. & Sergent, A.M. (1999). Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation. Science 283, 1897–1900.CrossRefGoogle ScholarPubMed
Jäger, W. & Mayer, J. (1995). Energy-filtered transmission electron microscopy of SimGen superlattices and Si-Ge heterostructures I. Experimental results. Ultramicroscopy 59, 33–45.CrossRefGoogle Scholar
Jolly, W.L. & Latimer, W.M. (1952). The equilibrium Ge(s) + GeO,(s) = 2GeO(g). The heat of formation of germanic oxide. J Am Chem Soc 74, 5757–5758.CrossRefGoogle Scholar
Krishnamohan, T., Krivokapic, Z., Uchida, K., Nishi, Y. & Saraswat Krishna, C. (2006). High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: Experiments. IEEE Trans Electron Device 53, 990–998.CrossRefGoogle Scholar
Krivanek, O.L., Kundmann, M.K. & Kimoto, K. (1995). Spatial resolution in EFTEM elemental maps. J Microsc 180, 277–287.CrossRefGoogle Scholar
Laha, A., Bugiel, E., Jestremski, M., Ranjith, R., Fissel, A. & Osten, J.H. (2009). Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide. Nanotechnol 20, 475604.CrossRefGoogle Scholar
Molle, A., Perego, M., Bhuiyan, M.N.K.J., Wiemer, C., Tallarida, G. & Fanciulli, M. (2007). The interface between Gd2O3 films and Ge (001): A comparative study between molecular and atomic oxygen mediated growths. J Appl Phys 102, 034513.CrossRefGoogle Scholar
Nakaharai, S., Tezuka, T., Hirashita, N., Toyoda, E., Moriyama, Y., Sugiyama, N. & Takagi, S. (2009). Formation process of high-purity Ge-on-insulator layers by Ge-condensation technique. J Appl Phys 105, 024515.CrossRefGoogle Scholar
Pötz, W. & Li, Z.Q. (1989). Imperfection and resonant tunneling in quantum-well heterostructures. Solid State Electron 32, 1353–1357.CrossRefGoogle Scholar
Prabhakaran, K., Maeda, F., Watanabe, Y. & Ogino, T. (2000). Distinctly different thermal decomposition pathways of ultra thin oxide layer on Ge and Si surfaces. Appl Phys Lett 76, 2244–2246.CrossRefGoogle Scholar
Toriumi, A., Tabata, T., Lee, C.H., Nishimura, T., Kita, K. & Nagashio, K. (2009). Opportunities and challenges for Ge CMOS—Control of interfacing field on Ge is a key. Microelectron Eng 86, 1571–1576.CrossRefGoogle Scholar
Tsoutsou, D., Apostolopoulos, G., Galata, S.F., Tsipas, P., Sotiropoulos, A., Mavrou, G., Panayiotatos, Y., Dimoulas, A., Lagoyannis, A., Karydas, A.G., Kantarelou, V. & Harissopoulos, S. (2009). Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition. J Appl Phys 106, 024107.CrossRefGoogle Scholar
Wilk, G.D., Wallace, R.M. & Anthony, J.M. (2001). High-k gate dielectrics: Current status and materials properties considerations. J Appl Phys 89, 5243–5275.CrossRefGoogle Scholar
Williams, D. & Carter, C.B. (2009). Transmission Electron Microscopy Part 1, 2nd Ed., pp. 83–84. New York: Springer.CrossRefGoogle Scholar
Xia, G., Wang, S., Zhou, S. & Xu, J. (2010). Selective phase synthesis of a high luminescence GdwO3: Eu nanocrystal phosphor through direct solution combustion. Nanotechnol 21, 345601.CrossRefGoogle ScholarPubMed