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Structural Stability of Nanocrystalline NiAl

Published online by Cambridge University Press:  02 July 2020

T. Chen ,
J.M. Hampikian ,
N.N. Thadhani  and
Z.L. Wang
T. Chen
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA30332-0245
J.M. Hampikian
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA30332-0245
N.N. Thadhani
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA30332-0245
Z.L. Wang
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA30332-0245
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Extract

NiAl is an important high temperature structural material, with a high melting point (1640°C), low density and excellent high temperature oxidation resistance. The room temperature ductility of NiAl may potentially be improved with the use of nanocrystalline grain size. However, a key question concerning the application of nanostructured NiAl is about its structural stability at high temperature. The current study is thus focused on the investigation of the structural stability of nanocrystalline NiAl using in-situ transmission electron microscopy (TEM) and differential thermal analysis (DTA).

Nanocrystalline B2-NiAl was prepared by ball milling (24 hrs) from elemental Ni and Al powders. Subsequent consolidation into bulk form was performed using dynamic consolidation employing a 3-capsule plate-impact fixture at approximately 400 m/s [1-3]. Powder nanocrystalline NiAl was dispersed on a holey carbon film for TEM observation. TEM specimens of shock compacted bulk NiAl nanocrystals were prepared by cutting, polishing, dimpling and ion milling.

Type
Nanophase and Amorphous Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 720 - 721
Copyright
Copyright © Microscopy Society of America

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References

1. Chen, T., Thadhani, N.N. and Hampikian, J.M., submitted (1998).Google Scholar

2. Atzmon, M., Appl. Phys. Lett. 22, 487 (1990).Google Scholar

3. T. R. Smith, , Mat. Res. Soc. Symp. Proc. 350, 219 (1994).CrossRefGoogle Scholar

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5. Research sponsored by the National Science Foundation under Grant No.DMR-962497.Google Scholar