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Structural Effect of Carbon on Mn5Ge3 Thin Films Grown on Ge(001) Substrates by Solid Phase Epitaxy

Published online by Cambridge University Press:  30 July 2021

Adriana Alvídrez-Lechuga ,
Sion Olive-Méndez ,
Luis Fuentes-Cobas ,
José Holguín-Momaca  and
Jasper Plaisier
Adriana Alvídrez-Lechuga
Affiliation:
Centro de Investigación en Materiales Avanzados S.C., United States
Sion Olive-Méndez
Affiliation:
Centro de Investigación en Materiales Avanzados S.C., United States
Luis Fuentes-Cobas
Affiliation:
Centro de Investigacion en Materiales Avanzados, United States
José Holguín-Momaca
Affiliation:
Centro de Investigación en Materiales Avanzados S.C., United States
Jasper Plaisier
Affiliation:
Eletttra - Sincrotrone Trieste, United States

Abstract

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Type
Defects in Materials: How We See and Understand Them
Information
Microscopy and Microanalysis , Volume 27 , Supplement S1 , August 2021 , pp. 1748 - 1749
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Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

Spiesser, A., Saito, H., Jansen, R., Yuasa, S., Ando, K., Large spin accumulation voltages in epitaxial Mn5Ge3 contacts on Ge without an oxide tunnel barrier, Phys. Rev. B 90 (2014) 205213.CrossRefGoogle Scholar
Abbes, O., Portavoce, A., Le Thanh, V., Girardeaux, C., Michez, L., Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics, Appl. Phys. Lett. 103 (2013) 172405.CrossRefGoogle Scholar
Zeng, C., Erwin, S.C., Feldman, L.C., Li, A.P., Jin, R., Song, Y., Thompson, J.R., Weitering, H. H., Epitaxial ferromagnetic Mn5Ge3 on Ge(111), Appl. Phys. Lett. 83 (2003) 5002.CrossRefGoogle Scholar