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Structural and Optical Properties of AlGaN MQWs Grown by MOCVD Using One and Two TMG Sources

Published online by Cambridge University Press:  23 September 2015

Shuo Wang
Affiliation:
Department of Physics, Arizona State University, Tempe AZ 85287-1504, U.S.A
Hongen Xie
Affiliation:
Department of Physics, Arizona State University, Tempe AZ 85287-1504, U.S.A
Yong O. Wei
Affiliation:
Department of Physics, Arizona State University, Tempe AZ 85287-1504, U.S.A
Alec M. Fischer
Affiliation:
Department of Physics, Arizona State University, Tempe AZ 85287-1504, U.S.A
Fernando A. Ponce
Affiliation:
Department of Physics, Arizona State University, Tempe AZ 85287-1504, U.S.A
M. Moseley
Affiliation:
Advanced Semiconductor Technology Facility, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, U.S.A.
B. Gunning
Affiliation:
Advanced Semiconductor Technology Facility, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, U.S.A.
W. A. Doolittle
Affiliation:
Advanced Semiconductor Technology Facility, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, U.S.A.

Abstract

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Type
Abstract
Copyright
Copyright © Microscopy Society of America 2015 

References

[1] Nellist, P. D. & Pennycook, S. J., Adv. Imag. Electr. Phys 113 (2000). p. 147.Google Scholar
[2] The authors gratefully acknowledge the use of facilities within the LeRoy Eyring Center for Solid State Science at Arizona State University.Google Scholar