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Strain Relaxation in InAs Quantum Dots and its Suppression by Indium Flushing

Published online by Cambridge University Press:  23 September 2015

H. Xie ,
F. A. Ponce ,
R. Jakomin ,
M. P. Pires ,
R. Prioli  and
P. L. Souza
H. Xie
Affiliation:
School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, USA Department of Physics, Arizona State University, Tempe, USA
F. A. Ponce
Affiliation:
Department of Physics, Arizona State University, Tempe, USA
R. Jakomin
Affiliation:
Instituto Nacional de Ciencia e Tecnologia de Nanodispositivos Semicondutores, PUC-Rio, Brazil Campus de Xerem, UFRJ, Duque de Caxias, Brazil
M. P. Pires
Affiliation:
Instituto Nacional de Ciencia e Tecnologia de Nanodispositivos Semicondutores, PUC-Rio, Brazil Instituto de Fisica, UFRJ, Rio de Janeiro, Brazil
R. Prioli
Affiliation:
Instituto Nacional de Ciencia e Tecnologia de Nanodispositivos Semicondutores, PUC-Rio, Brazil Pontificia Universidade Catolica do Rio de Janeiro, Rio de Janeiro, Brazil
P. L. Souza
Affiliation:
Instituto Nacional de Ciencia e Tecnologia de Nanodispositivos Semicondutores, PUC-Rio, Brazil Pontificia Universidade Catolica do Rio de Janeiro, Rio de Janeiro, Brazil

Abstract

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Abstract
Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 983 - 984
Copyright
Copyright © Microscopy Society of America 2015 

References

References:

[1] Luque, A. & Marti, A., Phys. Rev. Lett. 78, (1997). p. 5014.Google Scholar
[2] Jakomin, R., et al, J. Appl. Phys. 116 (2014). p. 093511.Google Scholar
[3] Leonard, D., et al, Phys. Rev. B 50 (1994). p. 11687.Google Scholar
[4] Wasilewski, Z., et al, Cryst. Growth 202 (1999). p. 1131.Google Scholar
[5] We gratefully acknowledge the use of facilities within the LeRoy Eyring Center for Solid State Science at Arizona State University..Google Scholar