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Strain Analysis of FinFET Device Utilizing Moiré Fringes in Scanning Transmission Electron Microscopy

Published online by Cambridge University Press:  01 August 2018

Yukihito Kondo
Affiliation:
EM business unit, JEOL Ltd., Tokyo, Japan.
Noriaki Endo
Affiliation:
EM business unit, JEOL Ltd., Tokyo, Japan.
Kei-ichi Fukunaga
Affiliation:
EM business unit, JEOL Ltd., Tokyo, Japan.
Yoshitaka Aoyama
Affiliation:
EM business unit, JEOL Ltd., Tokyo, Japan.
Kyoichiro Asayama
Affiliation:
EM business unit, JEOL Ltd., Tokyo, Japan.
Ching Chun Lin
Affiliation:
Failure analysis division, 1ST, 30072 Taiwan, R. O. C.
Hsu Kim
Affiliation:
Failure analysis division, 1ST, 30072 Taiwan, R. O. C.
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Abstract

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© Microscopy Society of America 2018 

References

[1] Hisamoto, D, Kaga, T Takeda, E IEEE Transactions on Electron Devices 38(6 1991) p 1419.CrossRefGoogle Scholar
[2] Kim, S, et al, AIP Advances 3 2013) p. 092110.CrossRefGoogle Scholar
[3] Endo, N Kondo, Y Proceedings of 32th LSI Testing Symposium 2012 p73.Google Scholar
[4] Kim, S, et al, Appl. Phys. Lett. 102(16 2013) p. 161604.CrossRefGoogle Scholar
[5] Endo, N Kondo, Y Microsc. Microanal. 19(S2 2013) p. 346.CrossRefGoogle Scholar
[6] Endo, N Kondo, Y Microsc. Microanal. 20(S3 2014) p. 1068.CrossRefGoogle Scholar
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