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Simulation Study of Aberration-Corrected High-Resolution Transmission Electron Microscopy Imaging of Few-Layer-Graphene Stacking

Published online by Cambridge University Press:  26 January 2010

Florence Nelson ,
Alain C. Diebold  and
Robert Hull
Florence Nelson*
Affiliation:
Optical Physics Group, College of Nanoscale Science and Engineering, University of Albany, 255 Fuller Rd., Albany, NY 12203, USA
Alain C. Diebold
Affiliation:
Optical Physics Group, College of Nanoscale Science and Engineering, University of Albany, 255 Fuller Rd., Albany, NY 12203, USA
Robert Hull
Affiliation:
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th St., Troy, NY 12180, USA
*
Corresponding author. E-mail: FNelson@uamail.albany.edu
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Abstract

Graphene is a single layer of carbon atoms arranged in a hexagonal lattice. The high carrier mobility and mechanical robustness of single layer graphene make it an attractive material for “beyond CMOS” devices. The current work investigates through high-resolution transmission electron microscopy (HRTEM) image simulation the sensitivity of aberration-corrected HRTEM to the different graphene stacking configurations AAA/ABA/ABC as well as bilayers with rotational misorientations between the individual layers. High-angle annular dark field–scanning transmission electron microscopy simulation is also explored. Images calculated using the multislice approximation show discernable differences between the stacking sequences when simulated with realistic operating parameters in the presence of low random noise.

Keywords

graphenesimulationsHRTEMHAADF-STEMstacking configurationsaberration correction
Type
Materials Applications
Information
Microscopy and Microanalysis , Volume 16 , Issue 2 , April 2010 , pp. 194 - 199
Copyright
Copyright © Microscopy Society of America 2010

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References

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