Hostname: page-component-7479d7b7d-8zxtt Total loading time: 0 Render date: 2024-07-10T22:37:59.575Z Has data issue: false hasContentIssue false
  • English
  • Français

Revisiting the FIB TEM Lift-Out Specimen Preparation Technique

Published online by Cambridge University Press:  02 July 2020

L. A. Giannuzzi  and
F. A. Stevie
L. A. Giannuzzi
Affiliation:
Advanced Materials Processing and Analysis Center, Mechanical Materials & Aerospace Engineering, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL, 32816-2450
F. A. Stevie
Affiliation:
Cirent Semiconductor (Lucent Technologies), 9333 S. John Young Parkway, Orlando, FL, 32819
Get access

Extract

In recent years, the focused ion beam (FIB) instrument has developed into a mainstay tool for the production of specimens for both scanning and transmission electron microscopy ((S)TEM). The inception and subsequent development of the FIB TEM lift-out (LO) technique has enabled electron transparent membranes of generally uniform thickness to be produced for TEM analysis. In general, the primary advantage of the FIB is that site specific sections may be fabricated quickly (e.g., < 1 hour) and reproducibly. Specifically, the FIB LO technique has been used extensively in our laboratories to produce on the order of a thousand Si-based specimens per year and hundreds of other specimens per year that have included metals, ceramics, composites, biological materials, geological materials, polymers, particles, and fibers, prepared in cross-section, plan view, and from fracture surfaces.

Type
Applications and Developments of Focused Ion Beams
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 508 - 509
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1.Giannuzzi, et al., Mat. Res. Soc. Symp. Proc. Vol. 480, (1997), 19.CrossRefGoogle Scholar
2.Stevie, et al., Charact. And Metrology for ULSI Technology: 1998 Conference, ed. Seiler, et al., AIP, (1998), 868.CrossRefGoogle Scholar
3.Giannuzzi, et al., Microscopy Research and Technique, 41 (1998) 285.3.0.CO;2-Q>CrossRefGoogle ScholarPubMed
4.Giannuzzi, et al., J. Process Analytical Chemistry, vol. IV, No. 3,4, (1999) p. 162–167.Google Scholar
5.Prenitzer, , et al., Metallurgical and Materials Transactions A., SEP 01 (1998) v 29 n 9, P. 2399.CrossRefGoogle Scholar
6.Giannuzzi, et al., Microstructural Science, Vol. 26, The 31st Annual Technical Meeting of the International Metallographical Society, (1999), 249–253.Google Scholar
7.Giannuzzi, and Lewinsohn, , 23rd Ann. Conf. on Comp., Adv. Cer., Mat., and Struct.: B, Cer. Eng. and Sci. Proc, eds.Ustundag, and Fischman, , Vol. 20, Issue 4, pp. 115–122, (1999).Google Scholar
8. FEI Company, Manual for the FIB 200TEM Workstation.Google Scholar
9. The support by NSF DMR #9703281, AMPAC and the I4/UCF/Cirent Partnership is greatly appreciated. Many thanks go to FEI Company and Micro Optics Inc. for their support. The involvement with multiple collaborators over the past few years is also greatly appreciated. We especially thank all UCF students and Cirent Semiconductor colleagues that have contributed to our FIB related research.Google Scholar