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Radial Distribution Function of Tin Thin Film Adjusted by Experimental Phase Shifts

Published online by Cambridge University Press:  02 July 2020

C. González-Valenzuela
Affiliation:
Centra de Investigación en Materiales Avanzados S.C, Miguel DE Cerantes 120, Complejo Industrial Chihuahua, Chihuahua, Ch, 31109, México
F. Espinosa-Magaña
Affiliation:
Centra de Investigación en Materiales Avanzados S.C, Miguel DE Cerantes 120, Complejo Industrial Chihuahua, Chihuahua, Ch, 31109, México
R. Martínez-Sánchez
Affiliation:
Centra de Investigación en Materiales Avanzados S.C, Miguel DE Cerantes 120, Complejo Industrial Chihuahua, Chihuahua, Ch, 31109, México
A. Duarte-Möller
Affiliation:
Centra de Investigación en Materiales Avanzados S.C, Miguel DE Cerantes 120, Complejo Industrial Chihuahua, Chihuahua, Ch, 31109, México
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Abstract

Titanium Nitride thin film was obtained by the DC-Sputtering technique and characterized using the transmission EXEELFS formalism . The experiments were performed in a CM 200 transmission electron microscope with a GAT AN 766 PEELS attachment. A primary energy of 200 keV and a spot size of 440 nm with an average acquisition time of 5 min were used. The atomic distribution obtained using EXEELFS was corrected with the respective experimental phase shifts. Atomic parameters were compared with those corrected by EXAFS phase shits and the known crystallographic values.

The energy loss spectra for the sample, around the ionization Ti L23-edge and N K-edge corrected for background and multiple scattering process is shows in Figure 1. N K-edge appears at an energy loss of 400.4 eV and the Ti L23-edge is located at an energy loss of 464.3 eV. These values on energy are shifted 0.6 eV respect to the isolated transitions.

Type
Quantitative Transmission Electron Microscopy of Interfaces (Organized by M. Rüehle, Y. Zhu and U. Dahmen)
Copyright
Copyright © Microscopy Society of America 2001

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References

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