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Quantitative Low Loss and Ultra Low Loss Spectroscopy in the STEM

Published online by Cambridge University Press:  02 July 2020

A. Howie
Affiliation:
Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 OHE, UK
F.J. Garcia de Abajo
Affiliation:
Centro Mixto CSIC-UPV/EHU, San Sebastian, Spain
N. Yamamoto
Affiliation:
Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152-8551, Japan
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Abstract

Many of the topics in valence spectroscopy originally pioneered with TEM equipment have now been taken over by STEM. Notable exceptions are the studies by J. Silcox and his colleagues of plasmon dispersion and of the guided modes in thin slabs where retardation and other relativistic effects arise. The growing use of STEM valence EELS on increasingly complex nanostructures and the development of dielectric excitation theory for quantitative interpretation of the results were recently reviewed. The spatial resolution approaches the atomic scale, exceeding by orders of magnitude the capability of near field spectroscopy. By using the cathodoluminescence (CDL) signal, optical precision in STEM energy loss measurement can also be achieved, particularly in the difficult region below 5 eV or even 1 eV. High spatial resolution can be preserved provided that an intermediate stage of carrier diffusion is not involved in the radiative decay of excitations.

Figure 1 shows STEM CDL images of an Ag particle obtained from the dipole l=1 and quadrupole l=2 surface plasmon excitations

Type
Quantitative STEM: Imaging and EELS Analysis Honoring the Contributions of John Silcox (Organized by P. Batson, C. Chen and D. Muller)
Copyright
Copyright © Microscopy Society of America 2001

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References

references

1.Batson, P. E. and Silcox, J., Phys Rev B, 27 (1983) 5224CrossRefGoogle Scholar
2.Chen, C. H. and Silcox, J., Phys Rev Lett, 35, (1975) 390CrossRefGoogle Scholar
3.Howie, A., Topics in Electron Diffraction and Microscopy of Materials (ed P.B. Hirsch), IOP Publishing- Bristol and Philadelphia, (1999) p79Google Scholar
4.Rivacoba, A.et al., Progr in Surface Science, 65 (2000) 1CrossRefGoogle Scholar
5.Klar, T.et al., Phys Rev Lett, 80 (1998) 4249CrossRefGoogle Scholar
6.Yamamoto, N.et al., Phys Rev B (submitted)Google Scholar
7.Garcia de Abajo, F. J., Phys Rev B, 59 (1999) 3095CrossRefGoogle Scholar
8.Batson, P. E., Phys Rev Lett, 49 (1982) 936CrossRefGoogle Scholar
9.Garcia de Abajo, F. J. and Howie, A., Phys Rev Lett, 80 (1998) 5180CrossRefGoogle Scholar
10.Reed, B. W.et al., Phys Rev B, 60 (1999) 5641CrossRefGoogle Scholar
11.Aizpurua, J.et al., Phys Rev B, 62 (2000) 2065CrossRefGoogle Scholar
12.Sanchez, E. J.et al., Phys Rev Lett, 82 (1999) 4014CrossRefGoogle Scholar
13.Kneipp, K.et al., Phys Rev Lett, 84 (2000) 3470CrossRefGoogle Scholar
14.Treacy, M. M. J.et al., Microscopy and Microanalysis 5 (suppl. 2) (1999) 676CrossRefGoogle Scholar
15.Silcox, J. and Whelan, M. J., Phil Mag, 5 (1960) 1CrossRefGoogle Scholar