Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-07-02T06:18:14.052Z Has data issue: false hasContentIssue false
  • English
  • Français

Quantification of Compositional Modulations in Self-Assembled Multisheet (Cd, Zn, Mn)Se Quantum Dot Structures

Published online by Cambridge University Press:  02 July 2020

T. Topuria ,
P. Möck ,
N.D. Browning ,
L.V. Titova ,
M. Dobrowolska ,
S. Lee  and
J.K. Furdyna
T. Topuria
Affiliation:
University of Illinois at Chicago, Department of Physics, Chicago, IL, 60607-7059–
P. Möck
Affiliation:
University of Illinois at Chicago, Department of Physics, Chicago, IL, 60607-7059–
N.D. Browning
Affiliation:
University of Illinois at Chicago, Department of Physics, Chicago, IL, 60607-7059–
L.V. Titova
Affiliation:
University of Notre Dame, Department of Physics, Notre Dame, IN, 46556
M. Dobrowolska
Affiliation:
University of Notre Dame, Department of Physics, Notre Dame, IN, 46556
S. Lee
Affiliation:
University of Notre Dame, Department of Physics, Notre Dame, IN, 46556
J.K. Furdyna
Affiliation:
University of Notre Dame, Department of Physics, Notre Dame, IN, 46556
Get access

Abstract

CdSe/ZnSe based semiconductor quantum dot (Q D) structures are a promising candidate for optoelectronic device applications. However, key to the luminescence properties is the cation distribution and ordering on the atomic level within the CdSe QDs/agglomerates. Here the Z contrast imaging technique in the scanning transmission electron microscope (STEM) is employed to study multisheet (Cd,Zn,Mn)Se QD structures. Since Z-contrast is an incoherent imaging technique, problems associated with strain contrast in conventional TEM are avoided an accurate size and composition determinations can be made.

For this work we used a JEOL JEM 201 OF field emission STEM/TEM. The sample was grown by molecular beam epitaxy in order to achieve vertical self-ordering of Cd rich quasi-2D platelet This sample comprises 8 sequences of 10 ML (2.83 nm)Zn0.9Mn0.1Se cladding layer and 0.3 ML (0.09 nm) CdSe sheet, a further 10 ML of Zn0.9Mn0.1Se, and a 50 nm ZnSe capping layer.

Type
Quantitative STEM: Imaging and EELS Analysis Honoring the Contributions of John Silcox (Organized by P. Batson, C. Chen and D. Muller)
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 202 - 203
Copyright
Copyright © Microscopy Society of America 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

references

1.Peranio, N.et al., Phys. Rev. B 61 (2000) 16015–16024.CrossRefGoogle Scholar
2.Nellist, P. D.et al.,Ultramicroscopy 78, (1999) 111–124.CrossRefGoogle Scholar
3.James, E. M. and Browning, N. D., Ultramicroscopy 78, (1999) 125–139CrossRefGoogle Scholar
4.Mock, P.et al.,submitted to J. of Electronic Materials.Google Scholar
5Pennycook, S. J., J. of Microscopy 144, (1986) 229–249.CrossRefGoogle Scholar
6 This work was sponsored by NSF grants # DMR-9733895 and # DMR 0072897Google Scholar