Electron-excited X-ray mapping is a key operational mode of the scanning electron microscope (SEM) equipped with energy dispersive X-ray spectrometry (EDS). The popularity of X-ray mapping persists despite the significant time penalty due to the relatively low output count rates, typically less than 25 kHz, that can be processed with the conventional EDS. The silicon drift detector (SDD) uses the same measurement physics, but modifications to the detector structure permit operation at a factor of 5–10 times higher than conventional EDS for the same resolution. Output count rates as high as 500 kHz can be achieved with 217 eV energy resolution (at MnKα). Such extraordinarily high count rates make possible X-ray mapping through the method of X-ray spectrum imaging, in which a complete spectrum is captured at each pixel of the scan. Useful compositional data can be captured in less than 200 s with a pixel density of 160 × 120. Applications to alloy and rock microstructures, ultrapure materials with rare inclusions, and aggregate particles with complex chemistry illustrate new approaches to characterization made practical by high-speed X-ray mapping with the SDD.Note: The Siegbahn notation for characteristic X-rays is commonly used in the field of electron beam X-ray spectrometry and will be used in this article. The equivalent IUPAC notation is indicated in parentheses at the first use.In this article, the following arbitrary definitions will be used when referring to concentration (C) ranges: major: C > 0.1 (10 wt%), minor: 0.01 ≤ C ≤ 0.1 (1–10 wt%), and trace: C < 0.01 (1 wt%).