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A New Method for Pin Point Failure Analysis Using Fib Combined Analytical Tem

Published online by Cambridge University Press:  02 July 2020

T. Kamino
Affiliation:
Hitachi Instruments Engineering Co., Ltd., 882 Ichige, Hitachi-naka, 312Japan
T. Yaguchi
Affiliation:
Hitachi Instruments Engineering Co., Ltd., 882 Ichige, Hitachi-naka, 312Japan
H. Matsumoto
Affiliation:
Hitachi Instruments Engineering Co., Ltd., 882 Ichige, Hitachi-naka, 312Japan
M. Tomita
Affiliation:
, Instrument Division, Hitachi Ltd., 882 Ichige, Hitachi-naka, 312Japan
H. Koike
Affiliation:
, Instrument Division, Hitachi Ltd., 882 Ichige, Hitachi-naka, 312Japan
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Extract

Recently, we developed the dedicated FIB system(FB-2000A) for the TEM specimen preparation. The system has ion optics with the maximum ion beam current density of 15 A/cm2 and the minimum ion probe size of l0nm. In the system, the side entry type specimen stage originally designed for high resolution TEM was employed, and the drift rate of the stage during FIB milling is less than lnm/min. The FIB-TEM compatible specimen holder has been developed it made milling of specimen in FIB system and observation of milled specimen in TEM without remounting the specimen possible.. The holder was designed to rotate the specimen around the axis of specimen holder so that both side of milled surfaces can be faced to incident electron beam in TEM.

To improve positional resolution in pin point TEM specimen preparation, it is important to know the inside structure of specimen before starting the milling.

Type
Microscopy of Semiconducting and Superconducting Materials
Copyright
Copyright © Microscopy Society of America

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References

1.Yaguchi, T., et al. ,Proc. Microscopy and Microanalysis, 1032(1996)Google Scholar