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Microstructures in Milli-Wave Sintered Silicon Nitride

Published online by Cambridge University Press:  02 July 2020

M. E. Brito
Affiliation:
National Industrial Research Institute of Nagoya, Nagoya, 462-8510, Japan E-mail: brito@nirin.go.jp
M.C. Valecillos
Affiliation:
National Industrial Research Institute of Nagoya, Nagoya, 462-8510, Japan E-mail: brito@nirin.go.jp
K. Hirao
Affiliation:
National Industrial Research Institute of Nagoya, Nagoya, 462-8510, Japan E-mail: brito@nirin.go.jp
M. Toriyama
Affiliation:
National Industrial Research Institute of Nagoya, Nagoya, 462-8510, Japan E-mail: brito@nirin.go.jp
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Extract

Expectations arised that unique microstructures could be attained by micro- or milli-wave processing of ceramics. To determine possible effects of milli-wave radiation on the microstructure evolution of silicon nitride, a detailed study has been carried out for silicon nitride sintered under conventional resistance heating and under milli-wave radiation (28 GHz). Densification of silicon nitride is achieved by liquid-phase sintering process. The additives such as yttria (Y2O3) and alumina (A12O3) are utilized to form a liquid phase during sintering. Considering the low microwave absorption factor of silicon nitride, heating in a microwave field is associated with the preferential microwave absorption of the additives. Differences in the nature and/or in the absorption factor of the additive will influence the sintering process and hence the final microstructure.

Type
Ceramics & Minerals
Copyright
Copyright © Microscopy Society of America

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References

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[3]Brito, M. E., Valecillos, M.C., Hirota, M., Hirao, K. and Toriyama, T., submitted to J. Mater. Res.Google Scholar