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Microstructural and Compositional Characterization of SiC-On-Insulator Structures

Published online by Cambridge University Press:  02 July 2020

Manabu Ishimaru ,
Robert M. Dickerson  and
Kurt E. Sickafus
Manabu Ishimaru
Affiliation:
Materials Science and Technology, Los Alamos National Laboratory, Los Alamos, NM87545
Robert M. Dickerson
Affiliation:
Materials Science and Technology, Los Alamos National Laboratory, Los Alamos, NM87545
Kurt E. Sickafus
Affiliation:
Materials Science and Technology, Los Alamos National Laboratory, Los Alamos, NM87545
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Extract

As the size of Si integrated circuit structures is continually reduced, interest in semiconductor-oninsulator (SOI) structures has heightened. SOI structures have already been developed for Si using oxygen ion implantation. However, the application of Si devices is limited due to the physical properties of Si. As an alternative to Si, SiC is a potentially important semiconductor for high-power, high-speed, and high-temperature electronic devices. Therefore, this material is a candidate for expanding the capabilities of Si-based technology. In this study, we performed oxygen ion implantation into bulk SiC to produce SiC-on-insulator structures. We examined the microstructures and compositional distributions in implanted specimens using transmission electron microscopy and a scanning transmission electron microscope equipped with an energy-dispersive X-ray spectrometer (STEM-EDX).

Figures 1(a) and 2(a) show bright-field images of 6H-SiC implanted with 180 keV oxygen ions at 650 °C to fluences of 7xl017 and 1.4xl018 cm−2, respectively. Three regions with distinct image contrast are apparent in Figs. 1(a) and 2(a), as indicated by A, B, and C.

Type
Future of Microscopy: Ceramics, Composites, and Cement
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 770 - 771
Copyright
Copyright © Microscopy Society of America

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References

1. For a review, see Izumi, K., MRS bulletin 23, 20 (1998).CrossRefGoogle Scholar
2.Barradas, N.P., Jeynes, C., Jackson, S.M, Nucl. Instr. Meth. B 136/138, 1168 (1998).CrossRefGoogle Scholar
3. This work was supported by the Department of Energy, Office of Basic Energy Sciences, Division of Materials Science. MI also acknowledges the partial support from the Foundation of Kyushu Industrial Technology Center for research abroad.Google Scholar