Hostname: page-component-7479d7b7d-q6k6v Total loading time: 0 Render date: 2024-07-12T02:44:56.483Z Has data issue: false hasContentIssue false
  • English
  • Français

Measurement of Indium-Content Variation in InGaN/GaN Dot-in-a-Wire Nanostructures by Electron Energy-Loss Spectroscopy

Published online by Cambridge University Press:  23 November 2012

S.Y. Woo ,
N. Gauquelin ,
G.A. Botton ,
S. Turner  and
Z. Mi
S.Y. Woo
Affiliation:
Materials Science and Engineering, McMaster University, Hamilton, Ontario, Canada
N. Gauquelin
Affiliation:
Materials Science and Engineering, McMaster University, Hamilton, Ontario, Canada
G.A. Botton
Affiliation:
Materials Science and Engineering, McMaster University, Hamilton, Ontario, Canada
S. Turner
Affiliation:
University of Antwerp, Antwerpen, Belgium
Z. Mi
Affiliation:
McGill University, Montreal, Quebec, Canada
Get access

Abstract

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Type
Research Article
Information
Microscopy and Microanalysis , Volume 18 , Issue S2: Proceedings of Microscopy & Microanalysis 2012 , July 2012 , pp. 1820 - 1821
Copyright
Copyright © Microscopy Society of America 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)