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Low-voltage STEM-EELS Quantification for Beam Sensitive Material Characterization

Published online by Cambridge University Press:  30 July 2020

Nicolas Dumaresq ,
Nicolas Brodusch  and
Raynald Gauvin
Nicolas Dumaresq
Affiliation:
McGill University, Montreal, Quebec, Canada
Nicolas Brodusch
Affiliation:
McGill University, Montreal, Quebec, Canada
Raynald Gauvin
Affiliation:
McGill University, Montreal, Quebec, Canada

Abstract

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Type
Pushing the Limits of Detection in Quantitative (S)TEM Imaging, EELS, and EDX
Information
Microscopy and Microanalysis , Volume 26 , Supplement S2 , August 2020 , pp. 1206 - 1208
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Copyright
Copyright © Microscopy Society of America 2020

References

Williams, D.B. and Carter, C.B., Inelastic Scattering and Beam Damage, in Transmission Electron Microscopy: A Textbook for Materials Science. 2009, Springer US: Boston, MA. p. 53–71.Google Scholar
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Kotakoski, J., et al. , Electron knock-on damage in hexagonal boron nitride monolayers. Physical Review B, 2010. 82(11): p. 113404.10.1103/PhysRevB.82.113404CrossRefGoogle Scholar
Suenaga, K., et al. , Visualizing and identifying single atoms using electron energy-loss spectroscopy with low accelerating voltage. Nature Chemistry, 2009. 1(5): p. 415–418.10.1038/nchem.282CrossRefGoogle ScholarPubMed