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Lateral Epitaxial Overgrowth of GaSb on GaAs and GaSb Substrates

Published online by Cambridge University Press:  02 July 2020

C. K. Inoki ,
D. L. Harris ,
T. S. Kuan ,
S. S. Yi ,
D. M. Hansen  and
T. F. Kuech
C. K. Inoki
Affiliation:
'Department of Physics, University at Albany, State University of New York, Albany, NY12222
D. L. Harris
Affiliation:
'Department of Physics, University at Albany, State University of New York, Albany, NY12222
T. S. Kuan
Affiliation:
'Department of Physics, University at Albany, State University of New York, Albany, NY12222
S. S. Yi
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI53706
D. M. Hansen
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI53706
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI53706
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Extract

Lateral epitaxial overgrowth (LEO) technique has recently been used to improve the quality of semiconductor layers grown on a substrate. Previous studies with GaN grown on sapphire showed a significant reduction in dislocation density in LEO layers. The LEO technique uses a thin mask layer to achieve selective epitaxy, allowing vertical and lateral growth through patterned windows. Reduced defect density is expected in laterally grown materials, since no lattice mismatch is involved. In practice, however, the thermal and mismatch stresses often cause dislocations to propagate laterally during LEO, and excessive dislocation activities induced by the stresses also tilt the LEO regions. GaSb-based semiconductors, which are of interest for infrared optoelectronic device applications, have much larger (∼8%) lattice constants than the commonly used GaAs substrate. The LEO technique is therefore of particular interest for its potential to significantly reduce the defect density in GaSb films grown on GaAs substrates.

Type
Semiconductors
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 1098 - 1099
Copyright
Copyright © Microscopy Society of America

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References

References:

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