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Investigation of N-Polar AlGaN/GaN and InAlN/GaN Thin Films Grown by MBE

Published online by Cambridge University Press:  25 July 2016

T.O. McConkie
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287
M.T. Hardy
Affiliation:
National Research Council Postdoctoral Fellow, resident at the Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375
D.F. Storm
Affiliation:
Electronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375
B.P. Downey
Affiliation:
Electronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375
D.S. Katzer
Affiliation:
Electronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375
D.J. Meyer
Affiliation:
Electronics Science & Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375
N. Nepal
Affiliation:
Sotera Defense Solutions, 2121 Cooperative Way, Suite 400, Herndon, VA 20171-5393
D.J. Smith
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287

Abstract

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Type
Abstract
Copyright
© Microscopy Society of America 2016 

References

References:

[1] Meneghesso, G., et al, IEEE Transactions on Device and Materials Reliability 8 (2008) 332.Google Scholar
[2] Mishra, U., et al, Proc. IEEE 96 (2008) 287.Google Scholar
[3] Hardy, M., et al, JVST A 34 (2016) 021512.Google Scholar
[4] This work was supported by Wyle Laboratories as part of Reliability Information Analysis Center Contract No. HC1047-05-D-4005 under the Air Force Research Laboratory Sensors Directorate Technical Task 261 (monitor: Chris Bozada). We acknowledge the use of the facilities in the John M. Cowley Center for High Resolution Electron Microscopy. Work at NRL was supported by the Office of Naval Research.Google Scholar