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In situ TEM Approaches to Controlling the Growth of Semiconductors on 2D Materials

  • Priyanka Periwal (a1) (a2), Joachim Dahl Thomsen (a3), Mark C. Reuter (a2), Dmitri Zakharov (a4), Lynne Gignac (a2), Timothy J. Booth (a3), Stephan Hofmann (a1) and Frances M. Ross (a2) (a5)...
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Corresponding author

*Corresponding authors: fmross@mit.edu, sh315@cam.ac.uk

References

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[1]Koma., A, Van der Waals epitaxy of lattice-mismatched systems, Journal of Crystal Growth 201 (1999) 236.
[2]Xu., Y, Cheng., C, Du., S, Yang., J, Yu., B, Luo., J, Yin., W, Li., E, Dong., S, Ye., P, Duan., X, Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky and p-n heterojunctions, ACS Nano 10 (2016) 4895.
[3]We acknowledge financial support from the EPSRC (EP/K016636/1) and ERC (Grant 279342: InSituNANO) (PP, SH) and the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under contract DE-AC02-98CH10886 (DZ). We also acknowledge Dr Mark C. Reuter and Arthur W. Ellis of IBM for their invaluable technical support.

In situ TEM Approaches to Controlling the Growth of Semiconductors on 2D Materials

  • Priyanka Periwal (a1) (a2), Joachim Dahl Thomsen (a3), Mark C. Reuter (a2), Dmitri Zakharov (a4), Lynne Gignac (a2), Timothy J. Booth (a3), Stephan Hofmann (a1) and Frances M. Ross (a2) (a5)...

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