Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-06-21T08:16:06.854Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical and Structural Properties of In and In + C Doped Ge

Published online by Cambridge University Press:  25 July 2016

R. Feng ,
F. Kremer ,
D. J. Sprouster ,
S. Mirzaei ,
S. Decoster ,
C. J. Glover ,
S. A. Medling ,
L. M. C. Pereira ,
S. P. Russo  and
M. C. Ridgway
R. Feng
Affiliation:
Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia.
F. Kremer
Affiliation:
Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia. Centre for Advanced Microscopy, The Australian National University, Canberra, Australia.
D. J. Sprouster
Affiliation:
Nuclear Science and Technology Department, Brookhaven National Laboratory, Upton, USA.
S. Mirzaei
Affiliation:
Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia.
S. Decoster
Affiliation:
KU Leuven, Institut voor Kern-en Stranlingsfysica, Leuven, Belgium.
C. J. Glover
Affiliation:
Australian Synchrotron, Melbourne, Australia.
S. A. Medling
Affiliation:
Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia.
L. M. C. Pereira
Affiliation:
KU Leuven, Institut voor Kern-en Stranlingsfysica, Leuven, Belgium.
S. P. Russo
Affiliation:
Applied Physics, School of Applied Sciences, RMIT University, Melbourne, Australia.
M. C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia.

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 1444 - 1445
Copyright
© Microscopy Society of America 2016 

References

[1] Yang, Y. J., et. al, Appl. Phys. Lett. 91, 102103 (2007).Google Scholar
[2] Boudinov, H., et. al., J. Appl. Phys. 86, 5909 (1999).Google Scholar
[3] Feng, R., et. al., J. Appl. Phys. Lett. 118, 165701 (2015).Google Scholar
[4] Feng, R., et. al., Appl. Phys. Lett. 107, 212101 (2015).CrossRefGoogle Scholar
[5] The authors would like to acknowledge the support from the ARC, AMMRF, ANFF and NCRIS.Google Scholar