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Dose Rate Considerations for Semiconductor Electronics: Why Current Variations Enable Unique GaN-based Transmission Electron Microscopy

Published online by Cambridge University Press:  30 July 2020

Petra Specht
Affiliation:
University of California in Berkeley, Berkeley, California, United States
Ronny Kirste
Affiliation:
NCSU, Raleigh, North Carolina, United States
Zlatko Sitar
Affiliation:
NCSU, Raleigh, North Carolina, United States
Travis Anderson
Affiliation:
NRL, Washington, District of Columbia, United States
Andrew Koehler
Affiliation:
NRL, Washington, District of Columbia, United States
Christian Kisielowski
Affiliation:
The Molecular Foundry and Joint Center for Artificial Photosynthesis, Berkeley, California, United States

Abstract

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Type
Bridging the Fundamental Electron Dose Gap for Observing Atom Processes in Complex Materials in their Native Environments
Copyright
Copyright © Microscopy Society of America 2020

References

Kisielowski, C., Specht, P., Freitag, B. et al. ., Adv. Funct. Mat. 29, 1807818 (2019)10.1002/adfm.201807818CrossRefGoogle Scholar
VandenBussche, E.J.; Flannigan, D.J., Nano Letters 19, 6687, 2019 10.1021/acs.nanolett.9b03074CrossRefGoogle Scholar
Zhang, D., Zhu, Y., Liu, L. et al. ., Science 359, 675 (2018)Google Scholar
Specht, P., Luysberg, M., Chavez, J. et al. ., Microsc. Microana. 24, S1 (2018)10.1017/S1431927618010346CrossRefGoogle Scholar
Work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.Google Scholar
Project funding by ONR #N00014-15-1-2714 and DoE NNSA #PL16-V-GaNPhotodiodePD3Ja is acknowledged.Google Scholar