Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T09:32:28.082Z Has data issue: false hasContentIssue false
  • English
  • Français

Direct Observation of Phase Transformations in Ge-Sb-Te Materials

Published online by Cambridge University Press:  30 July 2020

Manish Singh ,
Chanchal Ghosh ,
Paul Kotula ,
John Watt ,
Helena Silva  and
C Barry Carter
Manish Singh
Affiliation:
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut, United States
Chanchal Ghosh
Affiliation:
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut, United States
Paul Kotula
Affiliation:
Department of Materials Characterization, Sandia National Laboratories, Albuquerque, New Mexico, United States
John Watt
Affiliation:
Center for Integrated Nanotechnologies, Los Alamos, New Mexico, United States
Helena Silva
Affiliation:
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut, United States
C Barry Carter
Affiliation:
Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico, United States Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut, United States

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Advances in Electron Microscopy to Characterize Materials Embedded in Devices
Information
Microscopy and Microanalysis , Volume 26 , Supplement S2 , August 2020 , pp. 1418 - 1420
Check for updates
Copyright
Copyright © Microscopy Society of America 2020

References

Wuttig, M, Yamada, N (2007) Phase-change materials for rewriteable data storage. Nat Mater 6(11), 824–832.10.1038/nmat2009CrossRefGoogle ScholarPubMed
Dirisaglik, F, Bakan, G, Jurado, Z, Muneer, S, Akbulut, M, Rarey, J, Sullivan, L, Wennberg, M, King, A, Zhang, L (2015) High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift. Nanoscale 7(40), 16625–16630.10.1039/C5NR05512ACrossRefGoogle ScholarPubMed
Noe, P, Vallee, C, Hippert, F, Fillot, F, Raty, J-Y (2017) Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues. Semicond Sci Technol 33(1), 013002.10.1088/1361-6641/aa7c25CrossRefGoogle Scholar
Kooi, BJ, Groot, WMG, De Hosson, JTM (2004) In situ transmission electron microscopy study of the crystallization of Ge2Sb2Te5. J Appl Phys 95(3), 924–932.10.1063/1.1636259CrossRefGoogle Scholar
Carter, CB, Williams, DB (Eds.) (2016) Transmission electron microscopy: diffraction, imaging and spectrometry, Springer, Berlin Heidelberg, 17–80Google Scholar