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Comparison of Elemental Detection Using Microcalorimetry, SIMS, AES and EDS (SEM, STEM, and TEM)

Published online by Cambridge University Press:  02 July 2020

C. B. Vartuli ,
F. A. Stevie ,
D. A. Wollman ,
M. Antonell ,
R. B. Irwin ,
J. M. McKinley ,
T. L. Shofner ,
B. M Purcell ,
S. A. Anderson  and
B. To
C. B. Vartuli
Affiliation:
Lucent Technologies, 9333 S. John Young Parkway, Orlando, FL32819
F. A. Stevie
Affiliation:
Lucent Technologies, 9333 S. John Young Parkway, Orlando, FL32819
D. A. Wollman
Affiliation:
National Institute of Standards and Technology (NIST), 325 Broadway, Boulder, CO80303
M. Antonell
Affiliation:
Lucent Technologies, 9333 S. John Young Parkway, Orlando, FL32819
R. B. Irwin
Affiliation:
Lucent Technologies, 9333 S. John Young Parkway, Orlando, FL32819
J. M. McKinley
Affiliation:
Lucent Technologies, 9333 S. John Young Parkway, Orlando, FL32819
T. L. Shofner
Affiliation:
Lucent Technologies, 9333 S. John Young Parkway, Orlando, FL32819
B. M Purcell
Affiliation:
Lucent Technologies, 9333 S. John Young Parkway, Orlando, FL32819
S. A. Anderson
Affiliation:
Lucent Technologies, 9333 S. John Young Parkway, Orlando, FL32819
B. To
Affiliation:
Lucent Technologies, 9333 S. John Young Parkway, Orlando, FL32819
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Extract

Cu contamination has become a larger concern as more semiconductor fabrication facilities switch from aluminum to Cu interconnects. The resolution limits of several analytical tools are compared to determine the optimum analysis methods for detecting Cu contamination in semiconductor materials. The elemental detection limits of Secondary Ion Mass Spectrometry (SIMS), Auger Electron Spectrometry (AES), Microcalorimetry and Energy Dispersive Spectrometry (EDS) systems on Scanning Electron Microscopy (SEM), Scanning Transmission Electron Microscopy (STEM), and Transmission Electron Microscopy (TEM) instruments are evaluated for Cu in WSix.

Two different samples were used in this study. One sample has a high uniform concentration (0.9% atomic, 0.7 wt.%) of Cu that was incorporated during the sputter deposition of WSi2. A lower concentration was ion implanted with 63Cu to a dose of lel4 cm-2 and has a peak concentration of lel9 cm"3, or 0.02% atomic.

Type
The Theory and Practice of Scanning Transmission Electron Microscopy
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 128 - 129
Copyright
Copyright © Microscopy Society of America

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References

1.Giannuzzi, L. A., et al., Materials Research Society Symposium Proceedings, 480, 19 (1597).CrossRefGoogle Scholar
2.Stevie, F. A., et al., in Characterization and Metrology for ULSI Technology: 1998 International Conference, Seiler, D. G., et al., eds., American Institute of Physics (1998) 868.CrossRefGoogle Scholar
3.Vartuli, C. B., et al., Microscopy and Microanalysis Symposium Proceedings, v 5, 896 (1999).CrossRefGoogle Scholar
4. Contribution of the U.S. Government; not subject to copyright.Google Scholar
5. Certain commercial instruments are identified in this paper in order to adequately specify the experimental procedure. Such identification does not imply recommendation or endorsement by NIST, nor does it imply that the instruments identified are necessarily the best available for the purpose.Google Scholar