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Atomic Resolution Electronic Structure in Device Development

Published online by Cambridge University Press:  02 July 2020

P.E. Batson ,
A.G. Domenicucci  and
E. Lemoine
P.E. Batson
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York, 10598
A.G. Domenicucci
Affiliation:
IBM Microelectronics Division, Analytical Services Group, Hopewell Junction, New York, 12333
E. Lemoine
Affiliation:
IBM Microelectronics Division, Analytical Services Group, Hopewell Junction, New York, 12333
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Extract

Recently, we have seen that the STEM can produce 0.12-0.26nm atomic resolution image detail in Annular Dark Field (ADF) mode even at modest acceleration voltages and in partnership with EELS for bonding studies. In the semi-conductor field, we are in a good position to take advantage of this imaging capability, because several atomic plane spacings range from 0.14 - 0.26 nm in the [100], [011] and [111] projections of Si and Ge. Figure 1. shows a result for the Si [111] projection obtained in the IBM VG Microscopes HB501UX, modified to produce a 0.19nm probe at 120KeV. The image has been filtered to remove spatial distances shorter than 0.15 nm, yielding the inset power spectrum. Each bright spot in the image corresponds to a single atomic column, separated from its neighbors by 0.19 nm. At 20Mx, the atom columns show enough contrast on the screen to allow astigmatism correction. These are similar to those discussed previously.

Type
Atomic Structure and Mechanisms at Interfaces in Materials
Information
Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 645 - 646
Copyright
Copyright © Microscopy Society of America 1997

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References

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