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Advances in heteroepitaxial integration of III-V and IV-VI semiconductors with electron channeling contrast imaging

Published online by Cambridge University Press:  30 July 2021

Eamonn Hughes ,
Brian Haidet ,
Bastien Bonef ,
Jennifer Selvidge ,
Chen Shang ,
Justin Norman ,
John Bowers  and
Kunal Mukherjee
Eamonn Hughes
Affiliation:
University of California Santa Barbara, United States
Brian Haidet
Affiliation:
University of California Santa Barbara, United States
Bastien Bonef
Affiliation:
University of California Santa Barbara, United States
Jennifer Selvidge
Affiliation:
University of California Santa Barbara, United States
Chen Shang
Affiliation:
University of California Santa Barbara, United States
Justin Norman
Affiliation:
University of California Santa Barbara, United States
John Bowers
Affiliation:
University of California Santa Barbara, United States
Kunal Mukherjee
Affiliation:
Stanford University, Stanford, California, United States

Abstract

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Type
Defects in Materials: How We See and Understand Them
Information
Microscopy and Microanalysis , Volume 27 , Supplement S1 , August 2021 , pp. 908 - 910
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Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

Ueda, O., On Degradation Studies of III–V Compound Semiconductor Optical Devices over Three Decades: Focusing on Gradual Degradation, Jpn. J. Appl. Phys. 49, 090001 (2010).CrossRefGoogle Scholar
Shin, S. H., Arias, J. M., Zandian, M., Pasko, J. G., and DeWames, R. E., Effect of the Dislocation Density on Minority-carrier Lifetime in Molecular Beam Epitaxial HgCdTe, Appl. Phys. Lett. 59, 2718 (1991).CrossRefGoogle Scholar
Wilkinson, A. J., Anstis, G. R., Czernuszka, J. T., Long, N. J., and Hirsch, P. B., Electron Channelling Contrast Imaging of Interfacial Defects in Strained Silicon-Germanium Layers on Silicon, Philosophical Magazine A 68, 59 (1993).CrossRefGoogle Scholar
Simkin, B. A. and Crimp, M. A., An Experimentally Convenient Configuration for Electron Channeling Contrast Imaging, Ultramicroscopy 77, 65 (1999).Google Scholar
Jung, D., Norman, J., Wan, Y., Liu, S., Herrick, R., Selvidge, J., Mukherjee, K., Gossard, A. C., and Bowers, J. E., Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy, Physica Status Solidi (a) 216, 1800602 (2019).CrossRefGoogle Scholar
Selvidge, J., Norman, J., Hughes, E. T., Shang, C., Jung, D., Taylor, A. A., Kennedy, M. J., Herrick, R., Bowers, J. E., and Mukherjee, K., Defect Filtering for Thermal Expansion Induced Dislocations in III–V Lasers on Silicon, Appl. Phys. Lett. 117, 122101 (2020).CrossRefGoogle Scholar
Bonef, B., Shah, R. D., and Mukherjee, K., Fast Diffusion and Segregation along Threading Dislocations in Semiconductor Heterostructures, Nano Lett. 19, 1428 (2019).CrossRefGoogle ScholarPubMed
Haidet, B. B., Hughes, E. T., and Mukherjee, K., Nucleation Control and Interface Structure of Rocksalt PbSe on (001) Zincblende III-V Surfaces, Phys. Rev. Materials 4, 033402 (2020).CrossRefGoogle Scholar
Haidet, B. B., Nordin, L., Muhowski, A. J., Vallejo, K. D., Hughes, E. T., Meyer, J., Simmonds, P. J., Wasserman, D., and Mukherjee, K., Interface Structure and Luminescence Properties of Epitaxial PbSe Films on InAs(111)A, Journal of Vacuum Science & Technology A 39, 023404 (2021).CrossRefGoogle Scholar