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UHV-TEM/REM Study of Palladium Silicide Islands Grown on Silicon (111) 7×7 Surface

Published online by Cambridge University Press:  02 July 2020

M. Takeguchi
Affiliation:
National Research Institute for Metals, Tsukuba, 305-0003, Japan
K. Mitsuishi
Affiliation:
National Research Institute for Metals, Tsukuba, 305-0003, Japan
J. Liu
Affiliation:
National Research Institute for Metals, Tsukuba, 305-0003, Japan
Q. Zhang
Affiliation:
National Research Institute for Metals, Tsukuba, 305-0003, Japan
M. Tanaka
Affiliation:
National Research Institute for Metals, Tsukuba, 305-0003, Japan
K. Furuya
Affiliation:
National Research Institute for Metals, Tsukuba, 305-0003, Japan
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Abstract

The growth of self-organized nanoislands and nanowires on a substrate has been extensively studied with a view to fabricating the new functional materials and advanced electric devices. in the present work, Pd silicide islands and wires grown on Si (111) 7x77×7surface were observed in situ by ultrahigh vacuum transmission and reflection electron microscopy (UHV-TEM/REM). Pd was deposited on Si (111) 7×7 surface at about 700 K using an electron beam evaporator attached to the column of a UHV microscope. Two kinds of specimens were prepared: a <111> oriented rectangular specimen with a thin area, whose (111) top surface was observed by plan viewed TEM, and a <110> oriented bulk rectangular specimen, whose (111) side surface was observed by REM

Figure la shows a REM image of Si (111) 7×7 surface. An incident electron beam is directed from the top to the bottom of the figure, which is foreshortened in the beam direction.

Type
Applications of Microscopy: Surfaces/Interfaces
Copyright
Copyright © Microscopy Society of America 2001

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References

[1]Takeguchi, M., Wu, Y., Tanaka, M. and Furuya, K., Appl. Surf. Sci. 159/160 (2000) 225.CrossRefGoogle Scholar
[2]Takeguchi, M., Tanaka, M., Yasuda, H. and Furuya, K., Surf. Interface Anal, (in press).Google Scholar