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TEM And IR Reflectance Studies on Phase Transitions in Thin VOx Films.

Published online by Cambridge University Press:  02 July 2020

M.A. Verheijen  and
E.P. Boonekamp
M.A. Verheijen
Affiliation:
Philips Centre for Manufacturing Technology, Prof. Holstlaan 4, WY42, 5656AA, Eindhoven, the Netherlands.
E.P. Boonekamp
Affiliation:
Philips Research, Prof. Holstlaan 4, WA11, 5656AA, Eindhoven, the Netherlands.
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Extract

Vanadium dioxide (VO2 ) exhibits a reversible semiconductor-to-metal phase transition around 341 K. The low temperature monoclinic P21 /c structure transforms into the tetragonal P42 /mnm rutile structure. The associated sharp changes in optical and electrical properties are used in various thin film switching devices. The present paper describes a study on the optical and structural changes during the synthesis of VO2 thin films using Infra-Red (IR) reflectance spectroscopy and Transmission Electron Microscopy (TEM).

The synthesis was derived from a sol-gel process by Guzman et al. Solutions of vanadyl isopropoxide (VO(OC3 H7)3 ) in n-propanol were spin-coated on a Si wafer provided with 300 nm thermal oxide. Subsequently, the wafer was transferred to an oven and heated to 773 K in a reducing H2/N2 atmosphere using a heating rate of 5 K/min. After a variable time (Δt) at 773 K, the samples were cooled down to room temperature.

Figure 1 shows the IR reflectance of thin (∽50 nm) VOx films on oxidised Si at λ,=3 μm and an angle of incidence ϕ of 30°.

Type
Thin Films/Coatings
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 842 - 843
Copyright
Copyright © Microscopy Society of America

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References

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