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A New High Resolution Field Emission SEM with Variable Pressure Capabilities

Published online by Cambridge University Press:  02 July 2020

Peter Gnauck
Affiliation:
LEO Elektronenmikroskopie GmbH, D-73446 Oberkochen, Germany
Volker Drexel
Affiliation:
LEO Elektronenmikroskopie GmbH, D-73446 Oberkochen, Germany
J. Greiser
Affiliation:
LEO Elektronenmikroskopie GmbH, D-73446 Oberkochen, Germany
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Abstract

To examine non conductive samples in their natural state (i.e. without significant sample preparation) at high resolution in the SEM the technique of low voltage field emission scanning electron microscopy (LVFESEM) is used. Due to the limitation in accelerating voltage (U<1kV) this technique is limited in respect of chemical analysis. Furthermore it is not possible to examine humid and outgassing samples in high vacuum. in recent years the application of variable pressure scanning electron microscopes (VPSEM) became an important technique in materials science as well as in life science. Due to the capability of maintaining a high chamber pressure humid, outgassing and non-conductive samples, can be examined in their natural state without significant sample modification or preparation. Especially compound materials with different electron yields can be imaged without any charging effects (Fig. 2), [2]. This paper describes a high resolution field emission electron microscope, that combines low voltage and variable pressure capabilities.

The high pressure capabilities of the instrument are realized by eliminating the high vacuum requirements of SEM in the microscope chamber. This is done by separating the vacuum environment in the chamber from the ultra high vacuum environment in the gun area.

Type
Corporate Session (Organized by M. Kersker)
Copyright
Copyright © Microscopy Society of America 2001

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References

references

[1]Shopper, E.. Schuhmacher, B.: GBP 77, 426, 1957Google Scholar
[2]Gnauck, P., Greiser, J.: A new approach to materials characterisation using low pressure and low voltage fieldemission scanning electron microscopy; DVM Bericht 519, p. 89ff, 2000Google Scholar
[3] Patent LEO VPSE-Detector.Google Scholar