Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Liliental-Weber, Z.
Ruvimov, S.
Swider, W.
Kim, Y.
Washburn, J.
Nakamura, S.
Kern, R. S.
Chen, Y.
and
Yang, J. W.
1997.
Role of Dopants and Impurities on Pinhole Formation; Defects Formed At Ingan/Gan And AlGaN/GaN Quantum Wells.
MRS Proceedings,
Vol. 482,
Issue. ,
Rouviere, J. L.
Weyher, J. L.
Seelmann-Eggebert, M.
and
Porowski, S.
1998.
Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals.
Applied Physics Letters,
Vol. 73,
Issue. 5,
p.
668.
Paku ,a, K.
Baranowski, Jacek M.
Leszczyn˜ski, M.
Suchanek, B.
and
Wojdak, M.
1998.
High quality GaN films - growth and properties.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 3,
Issue. ,
Liliental-Weber, Z.
Benamara, M.
Richter, O.
Swider, W.
Washburn, J.
Grzegory, I.
Porowski, S.
Yang, J. W.
and
Nakamura, S.
1998.
Polarity of GaN.
MRS Proceedings,
Vol. 512,
Issue. ,
Krukowski, S.
1999.
Growth of GaN Single Crystals under High Nitrogen Pressures and their Characterization.
Crystal Research and Technology,
Vol. 34,
Issue. 5-6,
p.
785.
Xue, Qizhen
Xue, Q. K.
Hasegawa, Y.
Tsong, I. S. T.
and
Sakurai, T.
1999.
Two-step preparation of 6H–SiC(0001) surface for epitaxial growth of GaN thin film.
Applied Physics Letters,
Vol. 74,
Issue. 17,
p.
2468.
Weyher, J.L.
Brown, P.D.
Zauner, A.R.A.
Müller, S.
Boothroyd, C.B.
Foord, D.T.
Hageman, P.R.
Humphreys, C.J.
Larsen, P.K.
Grzegory, I.
and
Porowski, S.
1999.
Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD).
Journal of Crystal Growth,
Vol. 204,
Issue. 4,
p.
419.
Zhao, L.
Marchand, H.
Fini, P.
Denbaars, S. P.
Mishra, U. K.
and
Speck, J. S.
1999.
Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction.
MRS Proceedings,
Vol. 595,
Issue. ,
Zhao, L.
Marchand, H.
Fini, P.
Denbaars, S. P.
Mishra, U. K.
and
Speck, J. S.
2000.
Polarity Determination for Mocvd Growth of GaN on Si(111) by Convergent Beam Electron Diffraction.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 5,
Issue. S1,
p.
104.
Baranowski, I.M.
and
Wysmolek, A.
2000.
Homoepitaxy of GaN - growth, investigations and applications.
p.
1.
Zheleva, T. S.
Karoui, F.
Kirchner, K.
Derenge, M.
Jones, K. A.
Vispute, R. D.
and
Venkatesan, T.
2000.
Approaches For Reduction Of The Defect Density In Group III Nitride Based Heterostructures.
MRS Proceedings,
Vol. 639,
Issue. ,
Ruvimov, S.
2000.
III-Nitride Semiconductors: Electrical, Structural and Defects Properties.
p.
51.
Xie, Z. Y.
Wei, C. H.
Chen, S. F.
Jiang, S. Y.
and
Edgar, J. H.
2000.
Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD.
Journal of Electronic Materials,
Vol. 29,
Issue. 4,
p.
411.
Guan, Z. P.
Cai, A. L.
Porter, H.
Cabalu, J.
Chen, J.
Huang, S.
and
Giedd, R. E.
2001.
GaN grown on two-step cleaned C-terminated 6H–SiC by molecular-beam epitaxy.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,
Vol. 19,
Issue. 1,
p.
280.
Liliental-Weber, Z.
Zakharov, D.
Jasinski, J.
Washburn, J.
O'Keefe, M. A.
and
Morkoc, H.
2002.
Screw Dislocations in MBE GaN Layers Grown on Top of HVPE Layers: Are They Different?.
MRS Proceedings,
Vol. 743,
Issue. ,
Weyher, J. L.
Macht, L.
Kamler, G.
Borysiuk, J.
and
Grzegory, I.
2003.
Characterization of GaN single crystals by defect‐selective etching.
physica status solidi (c),
p.
821.
Liliental-Weber, Z.
Zakharov, D.
Jasinski, J.
O'Keefe, M.A.
and
Morkoc, H.
2004.
Screw Dislocations in GaN Grown by Different Methods.
Microscopy and Microanalysis,
Vol. 10,
Issue. 1,
p.
47.
DAI, X. Q.
WU, H. S.
XU, S. H.
XIE, M. H.
and
TONG, S. Y.
2004.
STRUCTURAL PROPERTIES OF GaN FILMS GROWN ON THE 6H-SiC(0001)$(\sqrt{3}\times \sqrt{3})R30^\circ$ SUBSTRATE.
Surface Review and Letters,
Vol. 11,
Issue. 01,
p.
1.
Zhu, M.
Xia, Y.
Zhao, W.
Li, Y.
Senawiratne, J.
Detchprohm, T.
and
Wetzel, C.
2008.
Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy.
Journal of Electronic Materials,
Vol. 37,
Issue. 5,
p.
641.
2008.
Handbook of Nitride Semiconductors and Devices.
p.
817.