Hostname: page-component-84b7d79bbc-g5fl4 Total loading time: 0 Render date: 2024-07-27T13:49:06.372Z Has data issue: false hasContentIssue false
  • English
  • Français

Boundary Analysis Of SrTio3 Ceramic Condenser

Published online by Cambridge University Press:  02 July 2020

Masahiro Kawasaki ,
Tadanori Yoshioka ,
Shigeki Sato ,
Kazuto Watanabe  and
Makoto Shiojiri
Masahiro Kawasaki
Affiliation:
Electron Optics Division, JEOL Ltd., Tokyo, 196-8558
Tadanori Yoshioka
Affiliation:
EO Applications Department, JEOL High-Tech Co Ltd., Tokyo, 196-0022
Shigeki Sato
Affiliation:
Materials Research Center, TDK Co., Chiba, 286-8588
Kazuto Watanabe
Affiliation:
Tokyo Metropolitan College of Technology, , Tokyo, 140-0011
Makoto Shiojiri
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Kyoto, 606-8585, Japan
Get access

Extract

SrTiO3-based semiconducting ceramics are widely used to electric devices such as dielectric condensers and varistors due to their properties of high dielectric constant, high dispersion frequency and small temperature dependence of the dielectric constant. The electric properties of these ceramic devices have been studied and found to be deeply influenced by the crystal growth mechanism, the grain boundary layer characteristics and the sintering atmosphere that is represented by such factors as oxygen partial pressure and processing temperature which relate to the atom vacancy formation. Atom vacancies, which play an important role to the electrical properties, have been detected by cathodoluminescence (CL) spectroscopy with scanning electron microscopy (SEM).

A ceramic condenser (Sr0.94Ca0.05Ba0.01)0.99TiO3 was investigated by Hitomi el at: using transmission electron microscopy (TEM). The material is a boundary layer (BL) semiconducting ceramic condenser, having dielectric layers between semiconducting grains. The same condenser material was investigated in this report at the grain boundary region using high resolution (scanning) transmission electron microscope (TEMSTEM) capable of High Angle Annular Dark Field (HAADF) technique.

Type
Atomic Structure And Microchemistry Of Interfaces
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 154 - 155
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Waku, S. et al. (1971) Rev. Elec. Commun Lab., 19: 665–679Google Scholar
2.Koschek, G. and Kubalek, E. (1983) Phys. Stat. Sol. (a) 79: 131–139.CrossRefGoogle Scholar
3.Hitomi, A et al. (1998) J. Electron Micros., 47: 603–610.CrossRefGoogle Scholar
4.Kobayashi, Y. et al. (1998) J. Electron Micros., 47: 29–37.CrossRefGoogle Scholar
5.Franken, P. E. C. et al. (1981) J. Am. Ceram. Soc. 64: 687–690CrossRefGoogle Scholar
6.Wermcke, R. (1981) The American Ceramic Society, Columbus OH. vol. 1: 272–Google Scholar
7.Wernicke, R. (1981) The American Ceramic Society, Columbus OH. vol. 1: 261–271Google Scholar