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Boundary Analysis Of SrTio3 Ceramic Condenser

Published online by Cambridge University Press:  02 July 2020

Masahiro Kawasaki
Electron Optics Division, JEOL Ltd., Tokyo, 196-8558
Tadanori Yoshioka
EO Applications Department, JEOL High-Tech Co Ltd., Tokyo, 196-0022
Shigeki Sato
Materials Research Center, TDK Co., Chiba, 286-8588
Kazuto Watanabe
Tokyo Metropolitan College of Technology, , Tokyo, 140-0011
Makoto Shiojiri
Department of Electronics and Information Science, Kyoto Institute of Technology, Kyoto, 606-8585, Japan
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SrTiO3-based semiconducting ceramics are widely used to electric devices such as dielectric condensers and varistors due to their properties of high dielectric constant, high dispersion frequency and small temperature dependence of the dielectric constant. The electric properties of these ceramic devices have been studied and found to be deeply influenced by the crystal growth mechanism, the grain boundary layer characteristics and the sintering atmosphere that is represented by such factors as oxygen partial pressure and processing temperature which relate to the atom vacancy formation. Atom vacancies, which play an important role to the electrical properties, have been detected by cathodoluminescence (CL) spectroscopy with scanning electron microscopy (SEM).

A ceramic condenser (Sr0.94Ca0.05Ba0.01)0.99TiO3 was investigated by Hitomi el at: using transmission electron microscopy (TEM). The material is a boundary layer (BL) semiconducting ceramic condenser, having dielectric layers between semiconducting grains. The same condenser material was investigated in this report at the grain boundary region using high resolution (scanning) transmission electron microscope (TEMSTEM) capable of High Angle Annular Dark Field (HAADF) technique.

Atomic Structure And Microchemistry Of Interfaces
Copyright © Microscopy Society of America

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1.Waku, S. et al. (1971) Rev. Elec. Commun Lab., 19: 665679Google Scholar
2.Koschek, G. and Kubalek, E. (1983) Phys. Stat. Sol. (a) 79: 131139.CrossRefGoogle Scholar
3.Hitomi, A et al. (1998) J. Electron Micros., 47: 603610.CrossRefGoogle Scholar
4.Kobayashi, Y. et al. (1998) J. Electron Micros., 47: 2937.CrossRefGoogle Scholar
5.Franken, P. E. C. et al. (1981) J. Am. Ceram. Soc. 64: 687690CrossRefGoogle Scholar
6.Wermcke, R. (1981) The American Ceramic Society, Columbus OH. vol. 1: 272Google Scholar
7.Wernicke, R. (1981) The American Ceramic Society, Columbus OH. vol. 1: 261271Google Scholar