3D Analytical TEM Approach to Effectively Characterize 3D-FinFET Device Features in Semiconductor Wafer-foundries

Wayne Zhao; Stephen Mongeon; Bianzhu Fu; Esther (PY) Chen; Daniel Flatoff; Nicolas LaManque; Jeremy Russell

doi:10.1017/S1431927614003535

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References

[1] Zhao, W., et al. Proc. 38^th International Symposium for Testing and Failure Analysis ((2012), pp. 347–355.Google Scholar

[2] Zhao, W., et al. Microscopy & Microanalysis, Vol. 19 (Supplement 2), ((2013), pp.902–3.Google Scholar

[3] Zhao, W. Microscopy & Microanalysis, Vol. 12 (Supplement 2), ((2006), pp.1030–31CD.Google Scholar

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Crossref Citations

This article has been cited by the following publications. This list is generated based on data provided by Crossref.

Zhao, Wayne W. Gribelyuk, Michael and Russell, Jeremy D. 2015. Application of EFTEM and XEDS Elemental Mapping to Characterization of Nanometer Devices in Semiconductor Wafer-Foundries. Microscopy and Microanalysis, Vol. 21, Issue. S3, p. 279.

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Fu, B. Gribelyuk, M. Dumas, L. Fang, C. LaManque, N. Hodgkins, L. and Chen, E. 2016. The Combination of STEM Tomography and STEM/EDS Analysis of NiSi Formation Related Defects in Semiconductor Wafer-foundries. Microscopy and Microanalysis, Vol. 22, Issue. S3, p. 326.

Zhao, Wayne Wang, Yun-yu and Fu, Bianzhu 2017. An Application of High-Resolution Dual-Lens Dark-Field Electron Holography in Strain Analysis for Nanometer Semiconductor Device in Wafer-foundries. Microscopy and Microanalysis, Vol. 23, Issue. S1, p. 1490.

Zhao, Wayne Fu, Bianzhu Wei, Yong and Brooks, Irene 2017. A Novel Strategy to Effectively Characterize FinFET Device by Multidirectional Comprehensive Analytical TEM in Semiconductor Wafer-foundries. Microscopy and Microanalysis, Vol. 23, Issue. S1, p. 336.

Zhao, Wayne and Gribelyuk, Michael 2018. Validation of Minimum Electron Beam Dosage on Characterization of Carbon-Depletion in ULK Dielectric Materials by EELS Quantifications. Microscopy and Microanalysis, Vol. 24, Issue. S1, p. 1998.

Zhao, Wayne W. 2018. Effectively Characterize Planar-view FinFET Semiconductor Device Etch Uniformity by Introducing Diffraction Contrast in STEM Imaging. Microscopy and Microanalysis, Vol. 24, Issue. S1, p. 390.

Zhao, Wayne Bennett, Corbin Pichumani, Pradip Sairam Walker, Gerald Eaton, Kevin Shearer, Michael Hassel Dumas, Laurent Brooks, Irene and Wang, Ying 2018. An Evaluation of Beam-Damage Zone in Si Wafer Machined by Gatan MicroPREPTM Laser-Ablation. Microscopy and Microanalysis, Vol. 24, Issue. S1, p. 1146.

Zhao, Wayne W. 2019. A BKM to Measure BEOL Liner Thickness from XEDS Mapping with Accuracy Within 1%. Microscopy and Microanalysis, Vol. 25, Issue. S2, p. 772.

Zhao, Wayne W. and Baumann, Frieder 2019. A Case-Study of Bubble Formation Mechanism by Analytical TEM during Evaluation of an Incoming Spin-On-Hardmask at Wafer-Foundries. Microscopy and Microanalysis, Vol. 25, Issue. S2, p. 1784.

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3D Analytical TEM Approach to Effectively Characterize 3D-FinFET Device Features in Semiconductor Wafer-foundries

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