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Studies of Mg-GaN grown by MBE on GaAs(111)B substrates

  • T. S. Cheng (a1), C. T. Foxon (a1), N. J. Jeffs (a1), D. J. Dewsnip (a2), L. Flannery (a2), J. W. Orton (a2), S. V. Novikov (a3), B. Ya Ber (a3) and Yu A. Kudriavtsev (a3)...

Abstract

This paper discusses the growth of Mg-doped GaN samples using a modified Molecular Beam Epitaxy (MBE) method. Our results suggest that the dopant is incorporated from a surface population maintained by the incident Mg flux by a rapid diffusion mechanism. It follows that the chemical concentration will increase with time of growth and that the p-doping level will also increase progressively with film thickness for a given Mg flux. Increasing the Mg flux to the surface results at first in a higher doping density, but this saturates when the Mg surface concentration reaches a finite value.

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Keywords

Studies of Mg-GaN grown by MBE on GaAs(111)B substrates

  • T. S. Cheng (a1), C. T. Foxon (a1), N. J. Jeffs (a1), D. J. Dewsnip (a2), L. Flannery (a2), J. W. Orton (a2), S. V. Novikov (a3), B. Ya Ber (a3) and Yu A. Kudriavtsev (a3)...

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