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Spectroscopy of Proton Implanted GaN

  • M.G. Weinstein (a1), M. Stavola (a1), C.Y. Song (a1), C. Bozdog (a1), H. Przbylinska (a1), G.D. Watkins (a1), S.J. Pearton (a2) and R.G Wilson (a3)...

Abstract

Vibrational spectroscopy, photoluminescence, and optically detected electron paramagnetic resonance (ODEPR) have been used to characterize the defects produced in undoped and Sidoped GaN by the implantation of hydrogen. Several new vibrational bands were found near 3100 cm−1 in GaN that had been implanted with protons. These frequencies are close to those predicted for VGa−Hn complexes, leading to the tentative assignment of the new lines to VGa defects decorated with different numbers of H atoms. The proton implantation also produces an infrared PL band centered at 0.95 eV and the ODEPR spectrum labeled LE1, both of which were seen previously for electron-irradiated GaN.

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Footnotes

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MRS Internet J. Nitride Semicond. Res. 4S1,G5.9 (1999)

Footnotes

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Spectroscopy of Proton Implanted GaN

  • M.G. Weinstein (a1), M. Stavola (a1), C.Y. Song (a1), C. Bozdog (a1), H. Przbylinska (a1), G.D. Watkins (a1), S.J. Pearton (a2) and R.G Wilson (a3)...

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