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Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

  • Huajie Chen (a1), A. R. Smith (a1), R. M. Feenstra (a1), D. W. Greve (a2) and J. E. Northrup (a3)...

Abstract

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

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Copyright

Corresponding author

(a)Present address: Dept. of Physics and Astronomy, Ohio University, Athens, Ohio 45701.

Footnotes

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MRS Internet J. Nitride Semicond. Res. 4S1, G9.5 (1999)

Footnotes

References

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[1] Nakamura, S., Senoh, M., Nagahama, S.-I., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Jpn. J. Appl. Phys., Part 2 36, L1568 (1997); S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
[2] Moison, J.M., Guille, C., Houzay, F., Barthe, F., and Rompay, M. Van, Phys. Rev. B 40, 6149 (1989).
[3] Smith, A.R., Feenstra, R.M., Greve, D.W., Shin, M.-S., Skowronski, M., Neugebauer, J., Northrup, J.E., Appl. Phys. Lett. 72, 2114 (1998).
[4] See for example, Nakamura, S., Microelectron. J. 25, 651 (1994); J.M. Van Hove, P.P. Chow, A.M. Wowchak, J.J. Klaassen, R. Hickman II, and C. Polley, J. Vac. Sci. Technol. B 16, 1286 (1998); N. Grandjean, and J. Massies, Appl. Phys. Lett. 72, 1078 (1998).
[5] Smith, A.R., Ramachandran, V., Feenstra, R.M., Greve, D.W., Ptak, A., Myers, T., Sarney, W., Salamanca-Riba, L., Shin, M., and Skowronski, M., MRS Internet J. Nitride Semicond. Res. 3,12 (1998).
[6] Piner, E.L., Mcintosh, F.G., Roberts, J.C., Boutros, K.S., Aumer, M.E., Joshkin, V.A., El-Masry, N.A., Bedair, S.M., and Liu, S.X., Mat. Res. Soc. Symp. Proc. 449, 85 (1997).
[7] Smith, A.R., Feenstra, R.M., Greve, D.W., Neugebauer, J., and Northrup, J.E., Phys. Rev. Lett. 79, 3934 (1997).
[8] Northrup, J.E., Neugebauer, J., and Romano, L.T., submitted to Appl. Phys. Lett.
[9] Harrison, W.A., Electronic structure and the properties of solids (Freeman, San Francisco, 1980) p 176.
[10] Smith, A.R., Feenstra, R.M., Greve, D.W., Neugebauer, J., and Northrup, J.E., Appl. Phys. A 66, S947 (1998).
[11] Zywietz, T., Neugebauer, J., and Scheffler, M., Appl. Phys. Lett. 73, 487 (1998).
[12] Tarsa, E.J., Heying, B., Wu, X.H., Fini, P., DenBaars, S.P., and Speck, J.S., J. Appl. Phys. 82, 5472 (1997).
[13] Smith, A.R., Ramachandran, V., Feenstra, R.M., Greve, D.W., Shin, M.-S., Skowronski, M., Neugebauer, J., Northrup, J.E., Vac, J.. Sci. Technol. A 16, 1641 (1998).
[14] Zywietz, T.K., Neugebauer, J., Scheffler, M., and Northrup, J.E. (unpublished).

Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

  • Huajie Chen (a1), A. R. Smith (a1), R. M. Feenstra (a1), D. W. Greve (a2) and J. E. Northrup (a3)...

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