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P- and N-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers

  • D.J. As (a1), T. Simonsmeier (a1), J. Busch (a1), B. Schöttker (a1), M. Lübbers (a1), J. Mimkes (a1), D. Schikora (a1), K. Lischka (a1), W. Kriegseis (a2), W. Burkhardt (a2) and B.K. Meyer (a2)...

Abstract

P-type doping with Mg and n-type doping with Si of cubic GaN (c-GaN) epilayers is reported. Cubic GaN films are grown by rf-plasma assisted MBE on semi-insulating GaAs (001) substrates at a substrate temperature of 720°C. Elemental Mg and Si are evaporated from thermal effusions cells. Secondary ion mass spectroscopy (SIMS), low temperature photoluminescence (PL) and temperature dependent Hall-effect measurements are used to study the incorporation, optical and electrical properties. A Mg related shallow donor-acceptor transiton at 3.04 eV with an acceptor activation energy of EA= 0.230 eV is observed by low temperature PL. At Mg concentrations above 1018 cm−3 the dominance of a broad blue band indicates that also in c-GaN Mg is incorporated at different lattice sites or forms complexes. Si-doped c-GaN epilayers are ntype with electron concentrations up to 5*1019 cm−3. The incorporation of Si follows exactly the vapor pressure curve of Si, indicating a sticking coefficient of 1 for Si in cGaN. With increasing Si-concentration the intensity of the near-band luminescence continuously increases and broadens.

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Footnotes

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MRS Internet J. Nitride Semicond. Res. 4S1, G 3.24 (1999)

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References

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P- and N-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers

  • D.J. As (a1), T. Simonsmeier (a1), J. Busch (a1), B. Schöttker (a1), M. Lübbers (a1), J. Mimkes (a1), D. Schikora (a1), K. Lischka (a1), W. Kriegseis (a2), W. Burkhardt (a2) and B.K. Meyer (a2)...

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