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MOVPE growth optimization of high quality InGaN films.

  • W. Van der Stricht (a1), I. Moerman (a1), P. Demeester (a1), L. Considine (a2), E. J. Thrush (a2) and J. A. Crawley (a2)...

Abstract

In this paper growth of high quality InGaN films on (0001) sapphire substrates by atmospheric pressure organometallic vapour phase epitaxy in a vertical rotating disk reactor is investigated. The InGaN layers grown above 800 °C are transparent and show no In-droplets on the surface. The In-content varies between 56 and 9 % for growth temperatures between 700 and 850 °C. The DC X-ray rocking curve of InGaN typically shows a FWHM between 8 and 15 arcmin. Room temperature PL shows an intense band edge emission with a FWHM between 100 and 200 meV for an In-content of 9 and 56 %. The initial efforts on QW growth are discussed.

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