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A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

  • John T Torvik (a1), M. Leksono (a1), J. I. Pankove (a1) and B. Van Zeghbroeck (a2)

Abstract

We report on the fabrication and characterization of GaN/4H-SiC n-p-n heterojunction bipolar transistors (HBTs). The device structure consists of an n-SiC collector, p-SiC base, and selectively grown n-GaN emitter. The HBTs were grown using metalorganic chemical vapor deposition on SiC substrates. Selective GaN growth through a SiO2 mask was used to avoid damage that would be caused by reactive ion etching. In this report, we demonstrate common base transistor operation with a modest dc current gain of 15 at room temperature and 3 at 300°C.

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References

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[a] See for example: [1] [2]
[1] Pensl, G., Morkoc, H., Monemar, B., and Janzen, E. (Editors), Proc. 7th int. conf. on SiC, III-nitrides and related materials, Trans Tech Publications, Enfield (USA).
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[4] Pankove, J.I and Moustakas, T.D. (Editors), Semiconductors and Semimetals, Vol. 57 Gallium Nitride (GaN) II, Academic Press, New York (1998)
[5] Torvik, John T., Leksono, M., Pankove, J. I., Van Zeghbroeck, B., Ng, H. M., Moustakas, T., Appl. Phys. Lett. 72, 1371 (1998).
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[7] High-temperature GaN/SiC heterojunction bipolar transistorwith high gain”, Pankove, J.I., Chang, S.S., Lee, H. C., Molnar, R., Moustakas, T.D., Van Zeghbroeck, B., Proc. IEDM, p. 389-392, San Francisco, CA (1994)
[8] Pankove, J. I., Leksono, M., Chang, S. S., Walker, C., Van Zeghbroeck, B., MRS Internet J. Nitride Semicond. Res. 1, 39 (1996).
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[10] Sze, S.M., Physics of Semiconductor Devices, Wiley, New York, 1981, p. 140-144.
[11] Sze, S.M., Physics of Semiconductor Devices, Wiley, New York, 1981, p. 517.
[12] A first look at AlGaN/GaN HBTs”, McCartney, L., Kozodoy, P., Rodwell, M., DenBaars, S., and Mishra, U., Compound Semiconductor, Vol. 4, No.8, November 1998
[13] Torvik, J. T., Leksono, M. W., Pankove, J. I., Heinlein, C., Grepstad, J. K., Magee, C., J. Electron. Mater. 28, 234-239 (1999).
[14] Kato, Y., Kitamura, S., Hiramatsu, K., Sawaki, N., J. Cryst. Growth 144, 133 (1994).
[15] High-temperature and high-gain GaN/SiC heterojunction bipolartransistors”, Chang, S.S., Ph.D. dissertation, University of Colorado, 1996

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