Skip to main content Accessibility help
×
Home

Electrical Characterization of Defects Introduced In n-GaN During High Energy Proton and He-Ion Irradiation

  • S. A. Goodman, F. D. Auret (a1), F. K. Koschnick (a2), J.-M. Spaeth (a2), B. Beaumont (a2) and P. Gibart (a2)...

Abstract

We report on the electrical properties of defects as determined by deep level transient spectroscopy (DLTS) introduced in epitaxially grown n-GaN by 2.0 MeV protons and 5.4 MeV He-ions. After He-ion bombardment three electron traps ER3 (Ec − 0.196 eV), ER4 (Ec − 0.78 eV), and ER5 (Ec − 0.95 eV) were introduced uniformly in the region profiled by DLTS with introduction rates of 3270 ± 200, 1510 ± 300, and 3030 ± 500 cm−1 respectively. Capture cross section measurements revealed that the electron capture kinetics of ER5 is similar to that of a line defect. A defect with similar electronic properties as ER3 is observed after 2.0 MeV proton irradiation. The emission rate of ER3 depends on the electric field strength in the space-charge region. This emission rate is modelled according to the Poole-Frenkel distortion of a square well with a radius of 20 ± 2 Å or alternatively, a Gaussian well with a characteristic width of 6.0 ± 1 Å. Hence, we conclude that ER1 is a point defect which appears to have an acceptor like character. Two additional electron traps, ER1 (Ec −0.13 eV) and ER2 (Ec − 0.16eV) with introduction rates of 30 ± 10 and 600 ± 100 cm−1 not thusfar observed after electron or He-ion bombardment were observed after proton irradiation.

  • View HTML
    • Send article to Kindle

      To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

      Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

      Find out more about the Kindle Personal Document Service.

      Electrical Characterization of Defects Introduced In n-GaN During High Energy Proton and He-Ion Irradiation
      Available formats
      ×

      Send article to Dropbox

      To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

      Electrical Characterization of Defects Introduced In n-GaN During High Energy Proton and He-Ion Irradiation
      Available formats
      ×

      Send article to Google Drive

      To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

      Electrical Characterization of Defects Introduced In n-GaN During High Energy Proton and He-Ion Irradiation
      Available formats
      ×

Copyright

Footnotes

Hide All

MRS Internet J. Nitride Semicond. Res. 4S1, G6.12 (1999)

Footnotes

References

Hide All
[1] Doverspike, K., Wickenden, A. E., Binarii, S. C., Gaskill, D. K. and Freitas, J. A., Mat. Res. Soc. Symp. Proc. Vol. 395, p897 (1996).
[2] Nakamura, S. and Fasol, G., in “The blue laser diode”, (Springer Verlag, 1997).
[3] Lambsdorff, M., Kohl, J., Rosenzweig, J., Axmann, A. and Schneider, J., Appl. Phys. Lett. 58, 1881 (1991).
[4] Rao, V. M., Caneau, , Hong, W-P, , C., Chang, G-K., Papanicolaou, N., and Dietrich, H. B., J. Appl. Phys. 70, 3943 (1991).
[5] Linde, M., Uftring, S.J., Watkins, G.D., Harle, V. and Scholz, F., Phys. Rev. B 55, R10177 (1997).
[6] Look, D.C., Reynolds, D.C., Hemsky, J.W., Sizelove, J.R., Jones, R.L. and Molnar, R.J., Phys. Rev. Lett. 79, 2273 (1997).
[7] Fang, Z-Q., Look, D. C., Kim, W., Fan, Z., Botchkarev, A. and Morkoc, H., Appl. Phys. Lett. 72, 2277 (1998).
[8] Hacke, P., Detchprohm, T., Hiramatsu, K., and Sawaki, N., Appl. Phys. Lett. 63, 2676 (1993).
[9] Sheu, J.K., Su, Y.K., Chi, G.C., Chen, W.C., Chen, C.Y., Huang, C.N., Hong, J.M., Yu, Y.C., Wang, C.W., and Lin, E.K., J. Appl. Phys. 83, 3172 (1998).
[10] Ruminov, S., Liliental-Weber, Z., Washburn, J., Duxstad, K.J., Haller, E.E., Fan, Z.-F., Mohammed, S.N., Kim, W., Botchkarev, A.E., and Morkoc, H., Appl. Phys. Lett. 69, 1556 (1996).
[11] Hacke, P., Detchprohm, T., Hiramatsu, K. and Sawaki, N., Appl. Phys. Lett. 63, 2676, (1993).
[12] Götz, W., Johnson, N. M., Amano, H. and Akasaki, I., Appl. Phys. Lett. 65, 463 (1994).
[13] Neugebauer, J. and de Walle, C.G. Van, Phys. Rev. B 50, 8067 (1994).
[14] Mattila, T., Seitsonen, A.P. and Nieminen, R.M., Phys. Rev. B 54, 1474 (1996).
[15] Wosinski, T., J. Appl. Phys. 65, 1566 (1988).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed