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Effect of Oxygen Ion Implantation in Gallium Nitride

  • W. Jiang (a1), W.J. Weber (a1), S. Thevuthasan (a1), G.J. Exarhos (a1) and B.J. Bozlee (a2)...

Abstract

Epitaxial single crystal GaN films (2.0 μm thick) were implanted 60° off the <0001> surface normal with 600 keV O+ ions at 190 or 210 K over a range of ion fluences from 4.8×1017 to 5.0×1020 ions/m2. The implantation damage, as determined by in-situ Rutherford Backscattering Spectrometry in a <0001> channeling geometry (RBS/C), ranged from dilute defects up to the formation of a disorder saturation state that was not fully amorphous. The relative disorder on the Ga sublattice exhibited a sigmoidal dependence on ion fluence. Results show that GaN crystals are extremely resistant to the ion implantation damage as compared to other ceramic materials like SiC. An asymmetric shape in the angular scan curve around the <0001> axis, which might be associated with the Ga lattice distortion in the crystal structure, was observed for the as-irradiated material to the highest ion fluence (5.0×1020 O+/m2) at 210 K. Comparisons of Ga disorder depth-profiles from the experiment and SRIM97 simulations suggest that the damage peaks shift to greater depths at the low irradiation temperature (210 K). Significant recovery of these defects was not observed in the isochronal annealing steps (20-min) up to 970 K.

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Footnotes

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MRS Internet J. Nitride Semicond. Res. 4S1, G6.15 (1999)

Footnotes

References

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[1] Nakamura, S., MRS Bulletin 23 (5), 37 (1998).
[2] Shur, M.S., in Power Semiconductor Materials and Devices, edited by Pearton, S.J., Shul, R.J., Wolfgang, E., Ren, F., and Tenconi, S. (Mater. Res. Soc. Proc. 483, Warrendale, PA, 1998) pp. 15-26.
[3] Zolper, J.C., Wilson, R.G., Pearton, S.J., Stall, R.A., Appl. Phys. Lett. 68, 1945 (1996).
[4] Tan, H.H., Williams, J.S., Zou, J., Cockayne, D.J.H., Pearton, S.J., Stall, R.A., Appl. Phys. Lett. 69, 2364 (1996).
[5] Zolper, J.C., Crawford, M.H., Williams, J.S., Tan, H.H., Stall, R.A., Nucl. Instrum. Methods in Phys. Res. B 127/128, 467 (1997).
[6] Mensching, B., Liu, C., Rauschenbach, B., Kornitzer, K., Ritter, W., Mater. Sci. and Eng. B 50, 105 (1997).
[7] Liu, C., Mensching, B., Volz, K., Rauschenbach, B., Appl. Phys. Lett. 71, 2313 (1997).
[8] Chung, B.-C. and Gershenzon, M., J. Appl. Phys. 72, 651 (1992).
[9] Jiang, W., Weber, W.J., Thevuthasan, S., McCready, D.E., Surf. Interface Anal. (1998), in press.
[10] Jiang, W., Weber, W.J., Thevuthasan, S., McCready, D.E., Nucl. Instrum. Methods in Phys. Res. B 143, 333 (1998).
[11] Liu, C., Mensching, B., Zeitler, M., Volz, K., Rauschenbach, B., Phys. Rev. B 57, 2530 (1998).
[12] Jiang, W., Weber, W.J., Thevuthasan, S., McCready, D.E., Nucl. Instrum. Methods in Phys. Res. B, January, (1999), in press.
[13] Jiang, W., Weber, W.J., Thevuthasan, S., McCready, D.E., J. Nucl. Mater. 257, 295 (1998).
[14] Weber, W.J., Wang, L.M., Yu, N., Nucl. Instrum. Methods in Phys. Res. B 116, 322 (1996).
[15] Swanson, M.L., in Handbook of Modern Ion Beam Analysis, edited by Tesmer, J.R. and Nastasi, M. (Materials Research Society, Pittsburgh, PA, 1995) p. 258.
[16] Jiang, W., Weber, W.J., Thevuthasan, S., submitted to 1998 MRS Fall Meeting, Symposium N, (1998).
[17] Chu, W.K., Mayer, J.W., Nicolet, M.-A., Backscattering Spectrometry (Academic Press, 1978) pp. 269-271.
[18] Liu, C., Wenzel, A., Volz, K., Rauschenbach, B., Nucl. Instrum. Methods in Phys. Res. B, January, (1999), in press.

Effect of Oxygen Ion Implantation in Gallium Nitride

  • W. Jiang (a1), W.J. Weber (a1), S. Thevuthasan (a1), G.J. Exarhos (a1) and B.J. Bozlee (a2)...

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