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Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN

  • I. Usov (a1), N. Parikh (a1), D.B. Thomson (a2) and Robert F. Davis (a2)

Abstract

A systematic investigation of damage accumulation in GaN films induced by Ar+ as a function of implantation temperature and dose rate has been conducted. Depth distribution of disorder was measured by Rutherford Backscattering/Channeling spectrometry. Two disordered regions were identified in the damage depth distribution: a surface peak and a bulk damage peak. These regions exhibited different behavior as a function of implantation temperature. The displaced atomic density in the bulk damage peak displayed a “reverse annealing” behavior in temperature range from 500 °C to 700 °C, which we attributed to formation of characteristic secondary defects. The influence of implantation temperature and dose rate on the radiation damage accumulation is discussed.

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References

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Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN

  • I. Usov (a1), N. Parikh (a1), D.B. Thomson (a2) and Robert F. Davis (a2)

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