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An experimental study of photoresist material etching by an atmospheric-pressure plasma jet with Ar/air mixed gas

Published online by Cambridge University Press:  14 March 2013

LIJUN WANG ,
WENJUN NING ,
MINGZHENG FU ,
CHEN WU  and
SHENLI JIA
LIJUN WANG
Affiliation:
State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China (lijunwang@mail.xjtu.edu.cn)
WENJUN NING
Affiliation:
State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China (lijunwang@mail.xjtu.edu.cn)
MINGZHENG FU
Affiliation:
State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China (lijunwang@mail.xjtu.edu.cn)
CHEN WU
Affiliation:
State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China (lijunwang@mail.xjtu.edu.cn)
SHENLI JIA
Affiliation:
State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China (lijunwang@mail.xjtu.edu.cn)
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Abstract

In this paper, electrical and optical emission spectrometer (OES) characteristics of an Ar/air atmospheric-pressure plasma jet (APPJ) based on the plasma needle and plasma pencil systems were investigated and analyzed. Electrical measurement results showed that the breakdown and working voltage of the jet increased with the increase of the ratio of air/Ar, and the emission intensity of Ar* significantly decreased. For the plasma needle, when the ratio of air/Ar reached 1, the OES characteristics of Ar/air were similar to those of air plasma, and the main excited species was N2*. For the plasma pencil, when a little air impurity was added in Ar, the emission intensities of N2* species will be significantly increased. Based on these two APPJ systems, photoresist materials were etched, etched results showed that the etched surface was easier to be oxidized with the addition of air into Ar. The etched surface was cleaner with pure Ar plasma with scanning substrate methods than that with the Ar/air mixture. Etched results of higher ratios of air/Ar plasma were similar to those of air plasma.

Type
Papers
Information
Journal of Plasma Physics , Volume 79 , Issue 5 , October 2013 , pp. 683 - 689
Copyright
Copyright © Cambridge University Press 2013 

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