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Plasma immersion ion implantation characteristics with q-nonextensive electron velocity distribution

Published online by Cambridge University Press:  20 January 2015

N. Navab Safa ,
H. Ghomi  and
A. R. Niknam
N. Navab Safa*
Affiliation:
Laser and Plasma Research Institute, Shahid Beheshti University, Tehran, 1983963113, Iran
H. Ghomi
Affiliation:
Laser and Plasma Research Institute, Shahid Beheshti University, Tehran, 1983963113, Iran
A. R. Niknam
Affiliation:
Laser and Plasma Research Institute, Shahid Beheshti University, Tehran, 1983963113, Iran
*
†Email address for correspondence: n_navabsafa@sbu.ac.ir
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Abstract

The plasma immersion ion implantation process is investigated in the presence of q–nonextensive electrons by using a one-dimensional fluid model. The effect of the nonextensivity parameter, q, on the plasma parameters and sheath dynamics during the implantation process is studied. The results show that the implantation dose can be enhanced in the presence of energetic electrons at the tail of the distribution function. Different parameters of plasma such as sheath thickness, ion velocity and ion density show more change at the larger values of the q–parameter. Furthermore, the results of simulation tend to what is predicted by the Maxwellian electron distribution function (q = 1).

Type
Research Article
Information
Journal of Plasma Physics , Volume 81 , Issue 3 , June 2015 , 905810303
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Copyright
Copyright © Cambridge University Press 2015 

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